XThin
®
LEDs
CxxxXT290-Sxx00-A
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
•
XThin LED Performance
460 & 470 nm
APPLICATIONS
•
•
•
Cellular Phone LCD Backlighting
Digital Camera Flash for Mobile Appliance
Mobile Phone Key Pads
– White LEDs
– Blue LEDs
– Green LEDs
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Traffic Signals
–
–
–
–
–
XT-12™
XT-16™
XT-18™
XT-21™
XT-24™
–
–
–
–
–
12.0
16.0
18.0
21.0
24.0
mW
mW
mW
mW
mW
min.
min.
min.
min.
min.
505nm – 8.5 mW min.
527nm – 7.0 mW min.
•
•
•
•
Thin 115 µm Chip
Low Forward Voltage - 3.2 Typical at 20 mA
Single Wire Bond Structure
Class 2 ESD Rating
•
•
•
•
CxxxXT290-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
H
PR3BV, Rev.
Datasheet: C
G•SiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 115µm
Anode (+)
Subject to change without notice.
www.cree.com
Maximum Ratings at T
A
= 25°C
Notes &3
DC Forward Current
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Note 2
Typical Electrical/Optical Characteristics at T = 25°C, If = 20mA
Part Number
Forward Voltage (V
f
, V)
Min.
C460XT290-Sxx00-A
C470XT290-Sxx00-A
C505XT290-S0100-A
C527XT290-S0100-A
Mechanical Specifications
Description
P-N Junction Area (μm)
Top Area (μm)
Bottom Area (μm)
Chip Thickness (μm)
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Back Contact Metal Area (μm)
Back Contact Metal Thickness (μm) (Au/Sn)
Note 4
2.7
2.7
2.7
2.7
Typ.
3.2
3.2
3.2
3.2
Max.
3.7
3.7
3.7
3.7
Note 3
CxxxXT290-Sxx00-A
30mA
100mA
125°C
5V
-40°C to +100°C
-40°C to +100°C
1000V
Class 2
Reverse Current
[I(Vr=5V), μA]
Max.
2
2
2
2
Full Width Half Max
(λ
D
, nm)
Typ.
21
22
30
35
CxxxXT290-Sxx00-A
Dimension
250 x 250
200 x 200
300 x 300
115
105
1.2
210 x 210
1.7
Tolerance
± 25
± 25
± 25
± 15
-5, +15
± 0.5
± 25
± 0.3
Notes:
1.
2.
3.
4.
5.
6.
7.
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds). See Cree Xthin Applications Note for more assembly process information.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See XBright®
Applications Note for detailed packaging recommendations.
Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the
chip. See Cree XBright Applications Note for more information.
XThin chips are shipped with the junction side down, not requiring a die transfer prior to die attach.
Specifications are subject to change without notice.
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks
of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3BV Rev. H
Standard Bins for CxxxXT290-Sxx00-A
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only
one bin. Sorted die kit (CxxxXT290-Sxx00-A)
orders may be filled with any or all bins (CxxxXT290-01xx-A)
contained in
the kit. All radiant flux and dominant wavelength values shown and specified are at If = 20mA.
XT-24
Radiant Flux
24.0 mW
455 nm
C460XT290-0117-A
C460XT290-S2400-A
C460XT290-0118-A
C460XT290-0119-A
C460XT290-0120-A
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
XT-2
Radiant Flux
24.0 mW
C460XT290-0117-A
C460XT290-0113-A
C460XT290-S200-A
C460XT290-0118-A
C460XT290-0114-A
C460XT290-0119-A
C460XT290-0115-A
C460XT290-0120-A
C460XT290-0116-A
21.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C460XT290-S800-A
462.5 nm
465 nm
XT-8
Radiant Flux
24.0 mW
21.0 mW
C460XT290-0117-A
C460XT290-0113-A
C460XT290-0109-A
C460XT290-0118-A
C460XT290-0114-A
C460XT290-0110-A
C460XT290-0119-A
C460XT290-0115-A
C460XT290-0111-A
C460XT290-0120-A
C460XT290-0116-A
C460XT290-0112-A
18.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C460XT290-S600-A
462.5 nm
465 nm
XT-6
Radiant Flux
24.0 mW
21.0 mW
18.0 mW
C460XT290-0117-A
C460XT290-0113-A
C460XT290-0109-A
C460XT290-0105-A
C460XT290-0118-A
C460XT290-0114-A
C460XT290-0110-A
C460XT290-0106-A
C460XT290-0119-A
C460XT290-0115-A
C460XT290-0111-A
C460XT290-0107-A
C460XT290-0120-A
C460XT290-0116-A
C460XT290-0112-A
C460XT290-0108-A
16.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks
of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3BV Rev. H
Standard Bins for CxxxXT290-Sxx00-A (continued)
XT-2
C460XT290-0117-A
C460XT290-S200-A
C460XT290-0118-A
C460XT290-0114-A
C460XT290-0110-A
C460XT290-0106-A
C460XT290-0102-A
C460XT290-0119-A
C460XT290-0115-A
C460XT290-0111-A
C460XT290-0107-A
C460XT290-0103-A
C460XT290-0120-A
C460XT290-0116-A
C460XT290-0112-A
C460XT290-0108-A
C460XT290-0104-A
24.0 mW
Radiant Flux
C460XT290-0113-A
21.0 mW
18.0 mW
16.0 mW
C460XT290-0109-A
C460XT290-0105-A
C460XT290-0101-A
12.0 mW
455 nm
457.5 nm
460 nm
Dominant Wavelength
C470XT290-S200-A
462.5 nm
465 nm
XT-2
Radiant Flux
21.0 mW
465 nm
C470XT290-0113-A
C470XT290-0114-A
C470XT290-0115-A
C470XT290-0116-A
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
XT-8
Radiant Flux
21.0 mW
C470XT290-0113-A
C470XT290-0109-A
C470XT290-S800-A
C470XT290-0114-A
C470XT290-0110-A
C470XT290-0115-A
C470XT290-0111-A
C470XT290-0116-A
C470XT290-0112-A
18.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C470XT290-S600-A
472.5 nm
475 nm
XT-6
Radiant Flux
21.0 mW
18.0 mW
C470XT290-0113-A
C470XT290-0109-A
C470XT290-0105-A
C470XT290-0114-A
C470XT290-0110-A
C470XT290-0106-A
C470XT290-0115-A
C470XT290-0111-A
C470XT290-0107-A
C470XT290-0116-A
C470XT290-0112-A
C470XT290-0108-A
16.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks
of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3BV Rev. H
Standard Bins for CxxxXT290-Sxx00-A (continued)
XT-2
C470XT290-0113-A
C470XT290-S200-A
C470XT290-0114-A
C470XT290-0110-A
C470XT290-0106-A
C470XT290-0102-A
C470XT290-0115-A
C470XT290-0111-A
C470XT290-0107-A
C470XT290-0103-A
C470XT290-0116-A
C470XT290-0112-A
C470XT290-0108-A
C470XT290-0104-A
21.0 mW
Radiant Flux
C470XT290-0109-A
18.0 mW
16.0 mW
C470XT290-0105-A
C470XT290-0101-A
12.0 mW
465 nm
467.5 nm
470 nm
Dominant Wavelength
C505XT290-S000-A
472.5 nm
475 nm
Radiant Flux
10.5 mW
C505XT290-0103-A
C505XT290-0101-A
C505XT290-0104-A
C505XT290-0102-A
8.5 mW
500 nm
505 nm
Dominant Wavelength
C527XT290-S000-A
510 nm
C527XT290-0110-A
C527XT290-0111-A
C527XT290-0108-A
C527XT290-0105-A
C527XT290-0102-A
C527XT290-0112-A
C527XT290-0109-A
C527XT290-0106-A
C527XT290-0103-A
Radiant Flux
10.0 mW
9.0 mW
8.0 mW
C527XT290-0107-A
C527XT290-0104-A
C527XT290-0101-A
7.0 mW
520 nm
525 nm
530 nm
Dominant Wavelength
535 nm
Copyright © 2003-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC, XThin and XBright are registered trademarks, and XT, XT-12, XT-16, XT-18, XT-21 and XT-24 are trademarks
of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3BV Rev. H
京公网安备 11010802033920号
EEWORLD
