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C505XT290-S0100-A

Description
XThin㈢ LEDs
CategoryLED optoelectronic/LED    photoelectric   
File Size230KB,6 Pages
ManufacturerCree
Websitehttp://www.cree.com/
Download Datasheet Parametric Compare View All

C505XT290-S0100-A Overview

XThin㈢ LEDs

C505XT290-S0100-A Parametric

Parameter NameAttribute value
MakerCree
package instruction0.30 X 0.30 MM, 0.115 MM HEIGHT, THIN, 2 PIN
Reach Compliance Codeunknow
colorGREEN
color@wavelengthBlue-Gree
ConfigurationSINGLE
Maximum forward current0.03 A
Maximum forward voltage3.7 V
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesSINGLE COLOR LED
method of packingBULK
Maximum reverse voltage5 V
shapeSQUARE
surface mountYES
XThin
®
LEDs
CxxxXT290-Sxx00-A
Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED
chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a
single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and
require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and
the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use
in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption
are required.
FEATURES
XThin LED Performance
460 & 470 nm
APPLICATIONS
Cellular Phone LCD Backlighting
Digital Camera Flash for Mobile Appliance
Mobile Phone Key Pads
– White LEDs
– Blue LEDs
– Green LEDs
Automotive Dashboard Lighting
LED Video Displays
Audio Product Display Lighting
Traffic Signals
XT-12™
XT-16™
XT-18™
XT-21™
XT-24™
12.0
16.0
18.0
21.0
24.0
mW
mW
mW
mW
mW
min.
min.
min.
min.
min.
505nm – 8.5 mW min.
527nm – 7.0 mW min.
Thin 115 µm Chip
Low Forward Voltage - 3.2 Typical at 20 mA
Single Wire Bond Structure
Class 2 ESD Rating
CxxxXT290-Sxx00-A Chip Diagram
Top View
Bottom View
Die Cross Section
H
PR3BV, Rev.
Datasheet: C
G•SiC LED Chip
300 x 300 μm
Gold Bond Pad
105 μm Diameter
Backside
Metalization
Cathode (-)
SiC Substrate
t = 115µm
Anode (+)
Subject to change without notice.
www.cree.com


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