Obsolescence Notice
This product is obsolete.
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MA3864
AUGUST 1993
ADVANCE DATA
DS3832-2.1
MA3864
RADIATION HARD 8192 x 8 BIT MASK-PROGRAMMABLE ROM
The MA3864 64k Mask Programmable ROM is configured
as 8192x8 bits and manufactured using CMOS-SOS high
performance, radiation hard, 1.5µm technology.
The design has full static operation with no clock or timing
strobe required. Address input buffers are deselected when chip
select is in the HIGH state.
Programming is performed during fabrication by customising
the penultimate layer of the process. Programming data may be
supplied in EPROM or as a data file in the standard INTEL Hex
format.
Operation Mode
Read
Output Disable
Standby
*E
L
L
H
X
G
L
H
X
X
I/O
D OUT
High Z
High Z
X
ISB 2
Power
FEATURES
s
1.5µm CMOS-SOS Technology
s
Latch-up Free
s
Fast Access Time 60ns Typical
s
Total Dose 10
6
Rad(Si)
s
Transient Upset >10
11
Rad(Si)/sec
s
SEU 4.3 x 10
-11
Errors/bitday
s
Single 5V Supply
s
Three State Output
s
Low Standby Current 100µA Typical
s
-55°C to +125°C Operation
s
All Inputs and Outputs Fully TTL or CMOS Compatible
s
Fully Static Operation
s
Programmable at Via Level for Fast Turnaround
s
4 Mask Programmable Chip Selects
*E is a mask programmed NAND function of E1,E2,E3,E4
and their inverses.
Figure 1: Truth Table
Figure 2: Block Diagram
1
MA3864
SIGNAL DEFINITIONS
A0-12
Address input pins which select a particular eight bit word within
the memory array.
Q0-7
Data output pins
E1, E2, E3, E4
Are mask programmed, to the customer’s specification, to form
the active LOW chip select function (E).
E
is driven by a 4-input
NAND gate which has E1,E2,E3,E4 or their inverses as it’s
inputs. Unused NAND gate I/Ps will be tied high internally. When
chip select (E) is low, a read is activated. When it is at a high level
it defaults the ROM to a precharge condition and holds the data
output drivers in a high impedance state.
G
Output Enable which when at a high level holds the data output
drivers in a high impedance state. When at a low level, data
output driver state is defined by
CS.
If this signal is not used it
must be connected to VSS.
CHARACTERISTICS AND RATINGS
Symbol
V
CC
V
I
T
A
T
S
Parameter
Supply Voltage
Input Voltage
Operating Temperature
Storage Temperature
Min.
-0.5
-0.3
-55
-65
Max.
7.0
V
DD
+0.3
125
150
Units
V
V
°C
°C
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not implied
Exposure to absolute maxlmum rating conditions for
extended periods may affect device reliability.
Figure 3: Absolute Maximum Ratings
Notes for Table 4:
Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V ±10% and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V ±10% (characteristics at higher radiation levels available on request). GROUP A
SUBGROUPS 1, 2, 3.
Symbol
V
DD
V
lH
V
lL
V
OH1
V
OH2
V
OL
I
LI
I
LO
I
SB1
Parameter
Supply voltage
Logical ‘1’ Input Voltage
Logical ‘0’ Input Voltage
Logical ‘1’ Output Voltage
Logical ‘1’ Output Voltage
Logical ‘0’ Output Voltage
Input Leakage Current
Output Leakage Current
Selected Static Current (CMOS)
Conditions
-
-
-
I
OH1
= -4mA
I
OH2
= -3mA
I
OL
= 8mA
V
IN
= V
DD
or V
SS
all inputs
Chip disabled, V
OUT
= V
DD
or V
SS
All inputs = V
DD
-0.2V
except
CS
= V
SS
+0.2V
f
RC
= 1MHz, all inputs
switching, V
IH
= V
DD
-0.2V
CS
= V
DD
-0.2V
Figure 4: Electrical Characteristics
(TTL)
(CMOS)
(TTL)
(CMOS)
(Option)
Min.
4.5
2.0
0.8 V
DD
V
SS
V
SS
2.4
V
DD
-0.5
-
-
-
-
Typ.
5.0
-
-
-
-
-
-
-
-
-
0.1
Max.
5.5
V
DD
V
DD
0.8
0.2 V
DD
-
-
0.4
±10
±10
2
Units
V
V
V
V
V
V
V
V
µA
µA
mA
I
DD
Dynamic Operating Current
(CMOS)
Standby Supply Current
-
3
10
mA
I
SB2
-
0.1
2
mA
2
MA3864
AC CHARACTERISTICS
Conditions of Test for Table 5:
1. Input pulse = V
SS
to 4.5V.
2. Times measurement reference level = 1.5V.
3. Input Rise and Fall times
≤5ns.
4. Output load 1TTL gate and CL = 60pF.
5. Transition is measured at ±500mV from steady state (T
ELQX
, T
EHQZ
, T
GHQZ
).
6. These parameters are sampled and not 100% tested (T
ELQX
, T
EHQZ
, T
GHQZ
).
Characteristics apply to pre-radiation at T
A
= -55°C to +125°C with V
DD
= 5V±10% and to post 100k Rad(Si) total dose radiation
at T
A
= 25°C with V
DD
= 5V ±10%. GROUP A SUBGROUPS 9, 10, 11.
Symbol
T
AVAX
T
AVQV
*T
ELQV
T
GLQV
T
AXQX
*T
ELQX
*T
EHQZ
T
GHQZ
T
ELEH
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Output Hold Time for Address Access
Chip Select Low to Outputs Active
Chip Select High to Outputs Hi-Z
Output Enable High to Output Hi-Z
Chip Select Pulse Width
Min
60
-
-
-
15
-
-
-
60
Max
-
60
60
15
-
30
30
10
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These functions refer to the action of the internal chip select,
E.
The timings given are relative to
the last of the pins; E1, E2, E3 and E4 to change which causes the specified transitions of
E.
Figure 5: Read Cycle AC Electrical Characteristics
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
l
= 0V
V
I/O
= 0V
Min.
-
-
Typ.
3
5
Max.
5
7
Units
pF
pF
Note: T
A
= 25°C and f = 1MHz. Data obtained by characterisation or analysis; not routinely measured.
Figure 6: Capacitance
3
MA3864
Symbol
F
T
Parameter
Basic Functionality
Conditions
V
DD
= 4.5V - 5.5V, FREQ = 1MHz
V
IL
= V
SS
, V
IH
= V
DD
, V
OL
≤
1.5V, V
OH
≥
1.5V
TEMP = -55°C to +125°C, GPS PATTERN SET
GROUP A SUBGROUPS 7, 8A, 8B
Figure 7: Functionality
Subgroup
1
2
3
7
8A
8B
9
10
11
Definition
Static characteristics specified in Table 4 at +25°C
Static characteristics specified in Table 4 at +125°C
Static characteristics specified in Table 4 at -55°C
Functional characteristics specified in Table 7 at +25°C
Functional characteristics specified in Table 7 at +125°C
Functional characteristics specified in Table 7 at -55°C
Switching characteristics specified in Table 5 at +25°C
Switching characteristics specified in Table 5 at +125°C
Switching characteristics specified in Table 5 at -55°C
Figure 8: Definition of Subgroups
4
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