EEWORLDEEWORLDEEWORLD

Part Number

Search

GVT73128A8SJ-10LI

Description
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32
Categorystorage   
File Size48KB,11 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

GVT73128A8SJ-10LI Overview

Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.300 INCH, PLASTIC, SOJ-32

GVT73128A8SJ-10LI Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCypress Semiconductor
package instruction0.300 INCH, PLASTIC, SOJ-32
Reach Compliance Codecompliant
Maximum access time10 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-J32
JESD-609 codee0
length20.765 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ32,.34
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum standby current0.0004 A
Minimum standby current2 V
Maximum slew rate0.13 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.585 mm
Base Number Matches1
GALVANTECH
, INC.
ASYNCHRONOUS
SRAM
FEATURES
Fast access times: 10, 12, 15and 20ns
Fast OE# access times: 5, 6, 7 and 8ns
Single +3.3V+0.3V power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Center power and ground pins for greater noise immunity
JEDEC standard for functionality and revolutionary pinout
Easy memory expansion with CE# and OE# options
Automatic CE# power down
High-performance, low-power consumption, CMOS
double-poly, double-metal process
GVT73128A8
REVOLUTIONARY PINOUT 128K X 8
128K x 8 SRAM
+3.3V SUPPLY, SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
GENERAL DESCRIPTION
The GVT73128A8 is organized as a 131,072 x 8 SRAM
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#) and output
enable (OE#) with this organization.
Writing to these devices is accomplished when write
enable (WE#) and chip enable (CE#) inputs are both LOW.
Reading is accomplished when (CE#) and (OE#) go LOW
with (WE#) remaining HIGH. The device offers a low power
standby mode when chip is not selected. This allows system
designers to meet low standby power requirements.
OPTIONS
Timing
10ns access
12ns access
15ns access
20ns access
MARKING
-10
-12
-15
-20
Packages
32-pin SOJ (400 mil)
J
32-pin SOJ (300 mil)
SJ
32-pin TSOP II (400 mil) TS
Power consumption
Standard
Low
Temperature
Commercial
Industrial
PIN ASSIGNMENT
32-Pin SOJ
32-Pin TSOP II
A3
A2
A1
A0
CE#
DQ1
DQ2
VCC
VSS
DQ3
DQ4
WE#
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
None
L
None
I
(
0°C
to
70°C)
(
-40°C
to
85°C)
A4
A5
A6
A7
OE#
DQ8
DQ7
VSS
VCC
DQ6
DQ5
A8
A9
A10
A11
A12
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699 Web Site http://www.galvantech.com
Rev. 1/00
Galvantech, Inc. reserves the right to chang e
products or specifications without notice.
SensorTile Unboxing and Trial
After the second batch of applications were successful, the express was sent to my home. It was already the 28th day of the twelfth lunar month when I was on holiday, and I had no time to concentrate ...
shuijingbingmai MEMS sensors
Comparison of CC2540 and nRF51822 application development
I looked at the application development in nRF51822 SDK, and found it quite different from TI.TI CC2540 has a relatively complete development framework, and this software framework has been used since...
Aguilera Wireless Connectivity
How to run the .exe program of mobile in non-touch screen mobile phone
How to run the .exe program of mobile in a non-touch screen phone? ? Please give me some advice. Another problem is that when deploying the program, when deploying toolhelp.dll, it prompts an error th...
cocoshine Embedded System
DSP2812AD Sampling
When using the AD module in 2812 to sample a sine wave, the sampled waveform observed by CCS will have a phase jump or a fault phenomenon after a period of time. What is the reason?...
labixiaojing Microcontroller MCU
What does N stand for in NK.bin?
nk.bin is the kernel file of wince, K should mean Kernel. So, what does N stand for?...
baiyun555 Embedded System
How to develop a printer driver that supports ESC/POS in Wince6?
How to develop a printer driver in WINCE? I transplanted the PRINTER in OAK to DRIVER and had problems compiling. How should I transplant and set it up? My development platform is PXA303 + a thermal p...
talent11 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 575  1031  1305  1668  2691  12  21  27  34  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号