AON5802 datasheet, PDF - EEWORLD Datasheet

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AON5802: DescriptionCommon-Drain Dual N-Channel Enhancement Mode Field Effect Transistor; CategoryDiscrete semiconductor The transistor; File Size167KB，4 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about

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AON5802 Overview

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AON5802 Parametric

Parameter Name	Attribute value
Maker	Alpha & Omega Semiconductor
package instruction	,
Reach Compliance Code	compli

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AON5802

Common-Drain Dual N-Channel Enhancement Mode Field Effect

Transistor

General Description

The AON5800 uses advanced trench technology to provide

excellent R

DS(ON)

, low gate charge and operation with gate

voltages as low as 2.5V while retaining a 12V V

GS(MAX)

rating. It is

ESD protected. This device is suitable for use as a uni-directional

or bi-directional load switch, facilitated by its common-drain

configuration.

Standard Product AON5802 is Pb-free (meets

ROHS & Sony 259 specifications). AON5802L is a Green Product

ordering option. AON5802 and AON5802L are electrically

identical.

Features

(V) = 30V

= 8 A (V

= 10V)

DS(ON)

< 17 mΩ (V

= 10V)

DS(ON)

< 20 mΩ (V

= 4.5V)

DS(ON)

< 22 mΩ (V

= 4.0V)

DS(ON)

< 24 mΩ (V

= 3.1V)

DS(ON)

< 30 mΩ (V

= 2.5V)

ESD Rating: 2000V HBM

Top View

Bottom View

Absolute Maximum Ratings T

=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

=25°C

Continuous Drain

Current R

θJA

=75°C/W T

=70°C

Pulsed Drain Current

Power Dissipation

θJA

=75°C/W

Maximum

±12

1.7

1.0

-55 to 150

Units

DSM

, T

STG

=25°C

=70°C

°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Symbol

≤

10s

Steady-State

θJA

θJC

Typ

4.5

Max

Units

°C/W

Alpha & Omega Semiconductor, Ltd.

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