CMOSH2-4L datasheet, PDF - EEWORLD Datasheet

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CMOSH2-4L: DescriptionSURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE; CategoryDiscrete semiconductor diode; File Size106KB，2 Pages; ManufacturerCentral Semiconductor

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CMOSH2-4L Overview

SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

CMOSH2-4L Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
Parts packaging code	SOD
package instruction	SOD-523, 2 PIN
Contacts	2
Manufacturer packaging code	SOD-523
Reach Compliance Code	_compli
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	R-PDSO-F2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum output current	0.2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
Maximum reverse recovery time	0.005 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Tin/Lead (Sn80Pb20)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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CMOSH2-4L

SURFACE MOUNT

HIGH CURRENT, LOW VF

SILICON SCHOTTKY DIODE

Central

DESCRIPTION:

TM

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CMOSH2-4L

is a high current, low VF silicon Schottky diode in

an SOD-523 surface mount package. This device

offers a VF as low as 0.33 volts and is designed

for small signal general purpose applications

where size and low loss is required.

MARKING CODE: 4L

SOD-523 CASE

MAXIMUM RATINGS:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current

Forward Surge Current, tp=10ms

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

TJ, Tstg

Θ

JA

(TA=25°C unless otherwise noted)

MIN

-65 to +150

500

°C

°C/W

SYMBOL

VRRM

IF

IFRM

IFSM

PD

40

200

350

1.0

250

UNITS

V

mA

A

mW

ELECTRICAL CHARACTERISTICS:

SYMBOL

IR

BVR

VF

CT

trr

TEST CONDITIONS

VR=20V

IR=100µA

IF=10mA

IF=100mA

IF=200mA

VR=4.0V, f=1.0MHz

TYP

11

MAX

50

0.325

0.4

0.5

10

5.0

UNITS

µA

V

pF

ns

40

53

0.24

0.35

0.42

8.5

4.0

IF=IR=10mA, Irr=1.0mA, RL=100Ω

R2 (17-September 2004)

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