M36W0R6050B1 datasheet, PDF - EEWORLD Datasheet

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M36W0R6050B1: Description64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package; File Size148KB，22 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M36W0R6050B1 Overview

64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package

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M36W0R6050T1

M36W0R6050B1

64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory

and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package

Features

■

Multi-Chip Package

– 1 die of 64 Mbit (4 Mb × 16) Flash memory

– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

Supply voltage

– V

DDF

= V

DDP

= V

DDQF

= 1.7 V to 1.95 V

Low power consumption

Electronic signature

– Manufacturer Code: 20h

– Device code (top flash configuration),

M36W0R6050T1: 8810h

– Device code (bottom flash configuration),

M36W0R6050B1: 8811h

Package

– ECOPACK®

FBGA

■

Stacked TFBGA88

(ZA)

■

Block locking

– All blocks locked at Power-up

– Any combination of blocks can be locked

– WP

for Block Lock-Down

Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

Common Flash Interface (CFI)

100 000 program/erase cycles per block

■

Flash memory

■

Programming time

– 8 µs by Word typical for Fast Factory

Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

Memory blocks

– Multiple Bank memory array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70 ns

Dual operations

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

■

PSRAM

■

Access time: 70 ns

Asynchronous Page Read

– Page size: 8 words

– First access within page: 70 ns

– Subsequent read within page: 20 ns

Three Power-down modes

– Deep Power-Down

– Partial Array Refresh of 4 Mbits

– Partial Array Refresh of 8 Mbits

■

January 2007

1/22

www.st.com

M36W0R6050B1 Related Products

	M36W0R6050B1	M36W0R6050T1	M36W0R6050B1ZAQE	M36W0R6050T1ZAQE	M36W0R6050T1ZAQF	M36W0R6050B1ZAQF
Description	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package	64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package
Is it Rohs certified?	-	-	conform to	conform to	conform to	conform to
Parts packaging code	-	-	BGA	BGA	BGA	BGA
package instruction	-	-	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
Contacts	-	-	88	88	88	88
Reach Compliance Code	-	-	compli	compli	compli	compli
Maximum access time	-	-	70 ns	70 ns	70 ns	70 ns
Other features	-	-	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16
JESD-30 code	-	-	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88
JESD-609 code	-	-	e1	e1	e1	e1
length	-	-	10 mm	10 mm	10 mm	10 mm
memory density	-	-	67108864 bi	67108864 bi	67108864 bi	67108864 bi
Memory IC Type	-	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	-	-	16	16	16	16
Mixed memory types	-	-	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM
Number of functions	-	-	1	1	1	1
Number of terminals	-	-	88	88	88	88
word count	-	-	4194304 words	4194304 words	4194304 words	4194304 words
character code	-	-	4000000	4000000	4000000	4000000
Operating mode	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	-	-	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-	-	-30 °C	-30 °C	-30 °C	-30 °C
organize	-	-	4MX16	4MX16	4MX16	4MX16
Package body material	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	-	-	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	-	-	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32
Package shape	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	-	-	260	260	260	260
power supply	-	-	1.8 V	1.8 V	1.8 V	1.8 V
Certification status	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	-	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	-	-	1.95 V	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	-	-	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	-	-	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	-	-	YES	YES	YES	YES
technology	-	-	CMOS	CMOS	CMOS	CMOS
Temperature level	-	-	OTHER	OTHER	OTHER	OTHER
Terminal surface	-	-	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	-	-	BALL	BALL	BALL	BALL
Terminal pitch	-	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	-	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	-	-	40	40	40	40
width	-	-	8 mm	8 mm	8 mm	8 mm

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