M36W0R6050T1ZAQF datasheet, PDF

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M36W0R6050T1ZAQF: Description64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package; Categorystorage storage; File Size148KB，22 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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M36W0R6050T1ZAQF Overview

64 Mbit (4 Mb 】16, Multiple Bank, Burst) Flash memory and 32 Mbit (2 Mb 】16) PSRAM, multi-chip package

M36W0R6050T1ZAQF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	BGA
package instruction	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
Contacts	88
Reach Compliance Code	compli
Maximum access time	70 ns
Other features	PSRAM IS ORGANIZED AS 2M X 16
JESD-30 code	R-PBGA-B88
JESD-609 code	e1
length	10 mm
memory density	67108864 bi
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+PSRAM
Number of functions	1
Number of terminals	88
word count	4194304 words
character code	4000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-30 °C
organize	4MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA88,8X12,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.8 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	8 mm

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M36W0R6050T1

M36W0R6050B1

64 Mbit (4 Mb ×16, Multiple Bank, Burst) Flash memory

and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package

Features

■

Multi-Chip Package

– 1 die of 64 Mbit (4 Mb × 16) Flash memory

– 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

Supply voltage

– V

DDF

= V

DDP

= V

DDQF

= 1.7 V to 1.95 V

Low power consumption

Electronic signature

– Manufacturer Code: 20h

– Device code (top flash configuration),

M36W0R6050T1: 8810h

– Device code (bottom flash configuration),

M36W0R6050B1: 8811h

Package

– ECOPACK®

FBGA

■

Stacked TFBGA88

(ZA)

■

Block locking

– All blocks locked at Power-up

– Any combination of blocks can be locked

– WP

for Block Lock-Down

Security

– 128-bit user programmable OTP cells

– 64-bit unique device number

Common Flash Interface (CFI)

100 000 program/erase cycles per block

■

Flash memory

■

Programming time

– 8 µs by Word typical for Fast Factory

Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

Memory blocks

– Multiple Bank memory array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

Synchronous / Asynchronous Read

– Synchronous Burst Read mode: 66 MHz

– Asynchronous/ Synchronous Page Read

mode

– Random Access: 70 ns

Dual operations

– Program Erase in one Bank while Read in

others

– No delay between Read and Write

operations

■

PSRAM

■

Access time: 70 ns

Asynchronous Page Read

– Page size: 8 words

– First access within page: 70 ns

– Subsequent read within page: 20 ns

Three Power-down modes

– Deep Power-Down

– Partial Array Refresh of 4 Mbits

– Partial Array Refresh of 8 Mbits

■

January 2007

1/22

www.st.com

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Is it Rohs certified?	conform to	-	-	conform to	conform to	conform to
Parts packaging code	BGA	-	-	BGA	BGA	BGA
package instruction	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	-	-	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88	8 X 10 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-88
Contacts	88	-	-	88	88	88
Reach Compliance Code	compli	-	-	compli	compli	compli
Maximum access time	70 ns	-	-	70 ns	70 ns	70 ns
Other features	PSRAM IS ORGANIZED AS 2M X 16	-	-	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16	PSRAM IS ORGANIZED AS 2M X 16
JESD-30 code	R-PBGA-B88	-	-	R-PBGA-B88	R-PBGA-B88	R-PBGA-B88
JESD-609 code	e1	-	-	e1	e1	e1
length	10 mm	-	-	10 mm	10 mm	10 mm
memory density	67108864 bi	-	-	67108864 bi	67108864 bi	67108864 bi
Memory IC Type	MEMORY CIRCUIT	-	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	16	-	-	16	16	16
Mixed memory types	FLASH+PSRAM	-	-	FLASH+PSRAM	FLASH+PSRAM	FLASH+PSRAM
Number of functions	1	-	-	1	1	1
Number of terminals	88	-	-	88	88	88
word count	4194304 words	-	-	4194304 words	4194304 words	4194304 words
character code	4000000	-	-	4000000	4000000	4000000
Operating mode	ASYNCHRONOUS	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	-	85 °C	85 °C	85 °C
Minimum operating temperature	-30 °C	-	-	-30 °C	-30 °C	-30 °C
organize	4MX16	-	-	4MX16	4MX16	4MX16
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	-	-	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA88,8X12,32	-	-	BGA88,8X12,32	BGA88,8X12,32	BGA88,8X12,32
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	-	-	260	260	260
power supply	1.8 V	-	-	1.8 V	1.8 V	1.8 V
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	-	-	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	1.95 V	-	-	1.95 V	1.95 V	1.95 V
Minimum supply voltage (Vsup)	1.7 V	-	-	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	-	-	1.8 V	1.8 V	1.8 V
surface mount	YES	-	-	YES	YES	YES
technology	CMOS	-	-	CMOS	CMOS	CMOS
Temperature level	OTHER	-	-	OTHER	OTHER	OTHER
Terminal surface	TIN SILVER COPPER	-	-	TIN SILVER COPPER	TIN SILVER COPPER	TIN SILVER COPPER
Terminal form	BALL	-	-	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	-	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	-	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	40	-	-	40	40	40
width	8 mm	-	-	8 mm	8 mm	8 mm

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