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3SK237

Description
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
CategoryThe transistor   
File Size19KB,4 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

3SK237 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

3SK237 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Other featuresLOW NOISE
Shell connectionSOURCE
ConfigurationSINGLE
Maximum drain current (ID)0.035 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeDUAL GATE, DEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)10 dB
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
3SK237
Silicon N–Channel Dual Gate MOSFET
Application
UHF/VHF RF amplifier
CMPAK-4
Features
• High gain and low niose
• Capable of low voltage operation
3
2
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Marking is “XY”.
Symbol
V
DS
V
G1S
V
G2S
I
D
P
ch
Tch
Tstg
Ratings
12
±10
±10
35
100
125
–55 to +125
Unit
V
V
V
mA
mW
°C
°C
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