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84140-01

Description
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
CategoryWireless rf/communication    Radio frequency and microwave   
File Size162KB,7 Pages
ManufacturerpSemi (peregrine semiconductor)
Websitehttp://www.psemi.com/
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84140-01 Overview

Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array

84140-01 Parametric

Parameter NameAttribute value
MakerpSemi (peregrine semiconductor)
package instructionMSOP-8
Reach Compliance Codecompli
structureCOMPONENT
Minimum operating frequency
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
RF/Microwave Device TypesWIDE BAND LOW POWER
Product Specification
PE84140
Product Description
The PE84140 is an ultra-high linearity, passive broadband
Quad MOSFET array with high dynamic range performance
capable of operation beyond 6.0 GHz. This quad array
operates with differential signals at all ports (RF, LO, IF),
allowing mixers to be built that use LO powers from -7 dBm to
+20 dBm. Typical applications range from frequency up/down-
conversion to phase detection for Cellular/PCS Base Stations,
Wireless Broadband Communications and STB/Cable
modems.
The PE84140 is optimized for stringent military applications. It
is manufactured on Peregrine’s UltraCMOS™ process, a
patented variation of silicon-on-insulator (SOI) technology on a
sapphire substrate, offering the performance of GaAs with the
economy and integration of conventional CMOS.
Ultra-High Linearity UltraCMOS™
Broadband Quad MOSFET Array
Features
Ultimate Quad MOSFET array
Ultra-high linearity, broadband
performance beyond 6.0 GHz
Ideal for mixer applications
Up/down conversion
Low conversion loss
High LO Isolation
Optimized for stringent military
applications
Figure 1. Functional Diagram
Figure 2. Package Type
8-lead MSOP
LO
IF
RF
Table 1. AC and DC Electrical Specifications @ +25 °C
Symbol
F
TYP
V
DS
V
DS
Match
V
T
R
DS
Characteristics
Operating Frequency Range
1
Drain-Source Voltage
Drain-Source Voltage Match
Threshold Voltage
Drain-Source ‘ON’ Resistance
Min
DC
Typ
6.0
330
20
-100
8.25
Max
Units
GHz
mV
mV
mV
Test Conditions
V
GS
= +3V, I
DS
= 40 mA
V
DS
= 0.1V; per ASTM F617-00
V
GS
= +3V, I
DS
= 40 mA
Note 1: Typical untested operating frequency range of Quad MOSFET transistors.
Document No. 70-0127-02
www.psemi.com
©2003-2006 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 7

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