DOMINANT
Semiconductors
Innovating Illumination
TM
DATA SHEET:
Power DomiLED
TM
InGaN White : DWW-UJG
Power DomiLED
TM
With its significant power in terms brightness, viewing angle and variety of
application possibilities,
Power DomiLED™
truly is a standout performer!
Ideal for automotive interior lighting as well as home, office and industrial
applications, it is also a proven performer in electronic signs and signals.
Features:
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High brightness surface mount LED.
Long lifetime up to 50,000 hours due to silicone encapsulation.
120° viewing angle.
Small package outline (LxWxH) of 3.2 x 2.8 x 1.8mm.
Qualified according to JEDEC moisture sensitivity Level 2.
Compatible to IR reflow soldering.
Environmental friendly; RoHS compliance.
Applications:
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Automotive: interior applications, eg: switches, telematics,
climate control system, dashboard, etc.
exterior applications, eg: signal lighting,
Center High Mounted Stop Light (CHMSL),
Display: full color display video notice board.
Industry: white goods (eg: Oven, microwave, etc.).
Lighting: architecture lighting, general lighting, garden light, etc
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© 2005 DomiLED is a trademark of DOMINANT Semiconductors.
All rights reserved. Product specifications are subject to change without notice.
1
08/01/2007 V(O)
DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White : DWW-UJG
Part Ordering
Number
DWW-UJG-VW1-1
• DWW-UJG-V1
• DWW-UJG-V2
• DWW-UJG-W1
Chip Technology
/ Color
InGaN
White
Viewing
Angle˚
120
Total Flux @
IF=30mA, mlm
2100 - 4150
Luminous Intensity @
IF = 30mA IV (mcd)
715.0 - 1400.0
715.0 - 900.0
900.0 - 1125.0
1125.0 - 1400.0
NOTE
1. All part number above comes in a quantity of 2000 units per reel.
2. Other luminous intensity groups may also be available upon request.
3. Luminous intensity is measured with an accuracy of ± 11%.
4. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.
5. InGaN wavelength is very sensitive to drive current. Operating at lower current is not recommended and may yield unpredictable performance
current pulsing should is used for dimming purposes.
6. An optional Vf bining is also available upon request. Bining scheme is as per following table.
6. Data provided for luminous flux is based on approximation.
2
08/01/2007 V(O)
DOMINANT
TM
Innovating Illumination
Semiconductors
InGaN White : DWW-UJG
Electrical Characteristics at Ta=25˚C
Part Number
DWW
Min. (V)
3.05
Vf @ If = 30mA
Typ. (V)
Max. (V)
3.40
4.00
V
r
@ I
r
= 10uA
Min. (V)
5
Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.
Vf Bining (Optional)
Vf @ If = 30mA
3A
30
31
32
Forward Voltage (V)
3.05 ... 3.35
3.35 ... 3.65
3.65 ... 3.95
3.95 ... 4.25
Forward voltage, Vf is measured with an accuracy of ± 0.1V.
Please consult sales and marketing to incorporate special part number to incorporate Vf binning.
Absolute Maximum Ratings
Maximum Value
DC forward current
Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.1)
Reverse voltage; Ir (max) = 10µA
ESD Threshold (HBM)
LED junction temperature
Operating temperature
Storage temperature
Power dissipation (at room temperature)
50
200
5
2
125
-40 … +110
-40 … +110
200
Unit
mA
mA
V
kV
˚C
˚C
˚C
mW
3
08/01/2007 V(O)
DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White : DWW-UJG
DWW, White Color Grouping
Dominant White Bin Structure
0.44
0.42
0.40
0.38
0.36
0.34
0.32
0.30
0.28
0.26
0.24
0.27
•
•
•
0.28
A1
A2
•
•
•
0.29
A3
A4
•
•
•
C1
C2
•
•
•
C3
C4
•
•
•
E1
E2
•
•
•
E3
E4
•
•
•
0.30
0.31
0.32
0.33
0.34
0.35
0.36
Chromaticity coordinate groups are measured with an accuracy of ± 0.01.
Bin
A1
A2
A3
A4
C1
C2
C3
C4
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
0.2775
0.2732
0.2775
0.2557
0.2900
0.2939
0.2900
0.2764
0.3025
0.3146
0.3025
0.2971
0.3150
0.3354
0.3150
0.3179
W
0.2900
0.2939
0.2900
0.2764
0.3025
0.3146
0.3025
0.2971
0.3150
0.3354
0.3150
0.3179
0.3275
0.3561
0.3275
0.3386
0.2900
0.3114
0.2900
0.2939
0.3025
0.3321
0.3025
0.3146
0.3150
0.3529
0.3150
0.3354
0.3275
0.3736
0.3275
0.3561
0.2775
0.2907
0.2775
0.2732
0.2900
0.3114
0.2900
0.2939
0.3025
0.3321
0.3025
0.3146
0.3150
0.3529
0.3150
0.3354
Bin
E1
E2
E3
E4
Cx
Cy
Cx
Cy
Cx
Cy
Cx
Cy
0.3275
0.3561
0.3275
0.3386
0.3400
0.3768
0.3400
0.3593
X
0.3400
0.3768
0.3400
0.3593
0.3525
0.3975
0.3525
0.3800
0.3400
0.3943
0.3400
0.3768
0.3525
0.4150
0.3525
0.3975
0.3275
0.3736
0.3275
0.3561
0.3400
0.3943
0.3400
0.3768
Dominant color coordinate is measured with an accuracy of ± 0.01.
4
08/01/2007 V(O)
DOMINANT
TM
Semiconductors
Innovating Illumination
InGaN White : DWW-UJG
Relative Intensity Vs Forward Current
Relative Intensity; Normalized at 30mA
Relative Intensity
2.5
Forward Current Vs Forward Voltage
60
50
40
30
20
10
0
1.5
1
0.5
0
Forward Current, mA
2
0
20
40
60
80
100
2.5
3
3.5
4
4.5
Forward Current, mA
Forward Voltage, V
Maximum Forward Current Vs Temperature
55
50
45
Wavelength Vs Forward Current
1
0.9
0.8
Temp. Solder Point, Ts
Forward Current, mA
40
35
30
25
20
15
10
5
0
0
10
20
30
40
50
60
70
80
90 100 110
Relative Intensity
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
450
500
550
600
650
700
750
800
Temp. Ambient, Ta
Temperature
Wavelength, nm
Radiation Pattern
30°
20°
10°
0°
1.0
40°
0.8
50°
0.6
60°
70°
80°
90°
0.4
0.2
0
5
08/01/2006 V(O)
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