V
RSM
I
F(AV)M
I
F(RMS)
I
FSM
V
F0
r
F
=
=
=
=
=
=
2800
7385
11600
87×10
3
0.8
0.05
V
A
A
A
V
mΩ
Rectifier Diode
5SDD 60Q2800
Doc. No. 5SYA1161-01 Feb. 05
•
Patented free-floating silicon technology
•
Very low on-state losses
•
Optimum power handling capability
Blocking
Maximum rated values
1)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Characteristic values
Symbol Conditions
V
RRM
V
RSM
f = 50 Hz, t
p
= 10ms, T
j
= 160°C
f = 5 Hz, t
p
= 10ms, T
j
= 160°C
Value
2000
2800
Unit
V
V
Parameter
Max. (reverse) leakage current
Symbol Conditions
I
RRM
V
RRM
, Tj = 160°C
min
typ
max
400
Unit
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
81
typ
90
max
108
50
100
Unit
kN
m/s
m/s
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 90 kN, T
a
= 25 °C
min
25.8
36
typ
2.1
max
26.2
Unit
kg
mm
mm
mm
Air strike distance
D
a
15
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SDD 60Q2800
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Symbol Conditions
I
F(AV)M
50 Hz, Half sine wave, T
C
= 90 °C
min
typ
max
7385
11600
Unit
A
A
A
A
2
s
A
A
2
s
Max. RMS on-state current I
F(RMS)
I
FSM
I
2
t
I
FSM
I
2
t
t
p
= 8.3 ms, T
j
= 160°C,
V
R
= 0 V
t
p
= 10 ms, T
j
= 160°C,
V
R
= 0 V
87×10
3
38.5×10
95×10
38×10
6
3
6
Characteristic values
Parameter
On-state voltage
Threshold voltage
Slope resistance
Symbol Conditions
V
F
V
(T0)
r
T
I
F
= 5000 A, T
j
= 160°C
T
j
= 160°C
I
T
= 2500...7500 A
min
typ
1.05
max
0.8
0.05
Unit
V
V
mΩ
Switching
Characteristic values
Parameter
Symbol Conditions
Q
rr
di
F
/dt = -10 A/µs, V
R
= 200 V
I
FRM
= 4000 A, T
j
= 160°C
min
typ
max
6300
Unit
µAs
Recovery charge
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 2 of 6
5SDD 60Q2800
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
typ
max
160
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 81...108 kN
Anode-side cooled
F
m
= 81...108 kN
Cathode-side cooled
F
m
= 81...108 kN
Double-side cooled
F
m
= 81...108 kN
Single-side cooled
F
m
= 81...108 kN
-40
min
typ
175
max
5
10
10
1
2
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
3.378
0.4710
2
0.919
0.0707
3
0.426
0.0074
4
0.280
0.0014
Fig. 1
Transient thermal impedance junction-to-
case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 3 of 6
5SDD 60Q2800
Fig. 2
On-state characteristics.
P
f
(W)
5SDD 60Q2800
Fig. 3
On-state characteristics.
T
case
(°C)
165
160
155
150
145
140
135
130
125
120
115
110
105
5SDD 60Q2800
Double-sided cooling
DC
180° rectangular
180° sine
120° rectangular
100
95
90
0
2000
4000
6000
8000
10000
12000
I
FAV
(A)
Fig. 4
On-state power losses vs average on-state
current.
Fig. 5
Max. permissible case temperature vs
average on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 4 of 6
5SDD 60Q2800
5SDD 60Q2800
5SDD 60Q2800
I
FSM
[kA]
150
140
130
120
110
100
90
80
70
60
50
10
0
5SDD 60Q2800
∫
i
2
dt [MA
2
s]
50
I
FSM
(kA)
90
80
70
I
FSM
T
j
= 160°C
48
46
44
T
j
= 160°C
60
42
50
40
38
36
34
40
30
20
10
0
5SDD 60Q2800
∫i
2
t
32
30
10
1
10
2
1
2
3
4
5
6 7 8 10
20
t [ms]
n
p
Fig. 6
Surge on-state current vs. pulse length. Half-
sine wave.
Q
rr
(µAs)
30000
20000
I
FRM
= 4000 A
T
j
= T
jmax
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
700
600
500
400
300
200
I
RM
(A)
I
FRM
= 4000 A
T
j
= T
jmax
10
4
8000
7000
6000
5000
5SDD 60Q2800
3000
2000
1
30
1
2
3
4
5 6 7 8 910
20
2
3
4
5 6 7 8 9 10
20
30
30
- di
F
/d t (A/µs)
-di
F
/dt(A/µs)
Fig. 8
Recovery charge vs. decay rate of on-state
current.
Fig. 9
Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1161-01 Feb. 05
page 5 of 6
5SDD 60Q2800
4000
10
2
80
70
60
50
40
FPGA/CPLD
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