V
RRM
I
FAVM
I
FSM
V
F0
r
F
V
DClink
=
=
=
=
=
=
4500
320
5
2
1.5
2400
V
A
kA
V
mΩ
Ω
V
Fast Recovery Diode
5SDF 03D4501
Doc. No. 5SYA1106-02 Sep. 01
•
Patented free-floating silicon technology
•
Low switching losses
•
Optimized to use as snubber and clamp diode in GTO and IGCT converters
•
Industry standard press-pack ceramic housing, hermetically cold-welded
•
Cosmic radiation withstand rating
Blocking
V
RRM
I
RRM
V
DClink
V
DClink
Repetitive peak reverse voltage
Repetitive peak reverse current
Permanent DC voltage for 100 FIT
failure rate
Permanent DC voltage for 100 FIT
failure rate
≤
4500 V
50 mA
2400
2800
V
V
Half sine wave, t
P
= 10 ms, f = 50 Hz
V
R
= V
RRM,
T
j
= 125°C
100% Duty
5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data
F
m
a
Mounting force
(see Fig. 8)
min.
max.
10 kN
12 kN
2
2
Acceleration:
Device unclamped
Device clamped
50 m/s
200 m/s
0.25 kg
≥
≥
30 mm
20 mm
m
D
S
D
a
Weight
Surface creepage distance
Air strike distance
ABB Semiconductors AG reserves the right to change specifications without notice.
5SDF 03D4501
On-state
(see Fig. 2, 3)
I
FAVM
I
FRMS
I
FSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
òI
2
dt
Max. surge current integral
320 A
500 A
5 kA
12 kA
2
125⋅10
3
A s
2
72⋅10
3
A s
Half sine wave, T
c
= 85°C
tp
tp
tp
tp
I
F
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
1000 A
Before surge:
T
c
= T
j
= 125°C
After surge:
V
R
≈
0 V
V
F
V
F0
r
F
Forward voltage drop
Threshold voltage
Slope resistance
≤
3.5 V
2 V
1.5 mΩ
Approximation for
I
F
= 200…3000
A
T
j
= 125°C
Turn-on
(see Fig. 4, 5)
V
fr
Peak forward recovery voltage
≤
140 V
di/dt = 1000 A/µs, T
j
= 125°C
Turn-off
(see Fig. 6, 7)
I
rr
Q
rr
E
rr
Reverse recovery current
Reverse recovery charge
Turn-off energy
≤
≤
≤
200 A
1000 µC
-- J
di/dt = 100 A/µs,
I
F
= 2000 A,
R
S
= 22
Ω,
T
j
= 125 °C,
V
RM
= 4500 V,
C
S
= 0.22 µF
Thermal
(see Fig. 1)
T
j
T
stg
R
thJC
Operating junction temperature range
Storage temperature range
Thermal resistance junction to case
≤
≤
≤
R
thCH
Thermal resistance case to heatsink
≤
≤
Analytical function for transient thermal impedance.
-40...125°C
-40...125°C
80 K/kW
80 K/kW
40 K/kW
16 K/kW
8 K/kW
Anode side cooled
Cathode side cooled
Double side cooled
Single side cooled
Double side cooled
F
m
=
10… 12 kN
Z
thJC
(t) =
å
n
i
1
20.95
0.396
2
10.57
0.072
3
7.15
0.009
4
1.33
0.0044
R
i
(1 - e
- t /
τ
i
)
R
i
(K/kW)
i
=
1
τ
i
(s)
F
m
= 10… 12 kN Double side cooled
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1106-02 Sep. 01
page 2 of 5
5SDF 03D4501
Fig. 1
Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2
Forward current vs. forward voltage (typ.
and max. values) and linear approximation
of max. curve at 125°C.
Fig. 3
Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1106-02 Sep. 01
page 3 of 5
5SDF 03D4501
200
180
160
V
fr
(V)
140
120
100
80
60
40
20
0
0
200
400
600
800
di/dt (A/
µ
s)
1000
25°C
125°C
Fig. 4
Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5
Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6
Typical current and voltage waveforms at
turn-off with conventional RC snubber
circuit.
Fig. 7
Reverse recovery current and reverse
recovery charge vs. di/dt (max. values).
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1106-02 Sep. 01
page 4 of 5
5SDF 03D4501
Fig. 8
Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)62 888 6419
+41 (0)62 888 6306
abbsem@ch.abb.com
www.abbsem.com
Doc. No. 5SYA1106-02 Sep. 01
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