5962R9568902TXC datasheet, PDF

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5962R9568902TXC: DescriptionQUAD LINE RECEIVER, CDFP16, CERAMIC, DFP-16; CategoryDrivers and interfaces; File Size220KB，25 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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5962R9568902TXC Overview

QUAD LINE RECEIVER, CDFP16, CERAMIC, DFP-16

5962R9568902TXC Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Parts packaging code	DFP
package instruction	DFP, FL16,.3
Contacts	16
Reach Compliance Code	compliant
ECCN code	EAR99
Input properties	DIFFERENTIAL SCHMITT TRIGGER
Interface integrated circuit type	LINE RECEIVER
Interface standards	GENERAL PURPOSE
JESD-30 code	R-CDFP-F16
JESD-609 code	e4
Number of functions	4
Number of terminals	16
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Maximum output low current	0.006 A
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Encapsulate equivalent code	FL16,.3
Package shape	RECTANGULAR
Package form	FLATPACK
power supply	3.3 V
Certification status	Not Qualified
Maximum receive delay	65 ns
Number of receiver bits	4
Filter level	MIL-PRF-38535
Maximum supply voltage	3.6 V
Minimum supply voltage	3 V
Nominal supply voltage	3.3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Add paragraph 3.1.1 and add appendix A for microcircuit die.

Changes in accordance with NOR 5962-R033-97.

Add class T requirements. Update boilerplate. Redrawn. - rrp

Made changes to 1.5 and added new RHA designator P in table I. - rrp

Make changes to I

INL

, I

, V

HYST

tests, footnote 5 and add new footnote

under table I. - ro

Add device type 02. Make changes to 1.2.2, 1.4, table I, figure 1, figure 3, and

appendix A. - ro

Add vendor CAGE F8859. Updated footnote 2/ in table I to accommodate

RHA designator “P”. Update boilerplate to reflect current requirements. - rrp

Add junction temperature (T

) under 1.3. Clarify RHA levels under “Maximum

total dose available” parameter as specified under 1.5. - ro

Make change to the “DC diode input current enable pin” limit as specified

under 1.3. - ro

Add device types 03 and 04. Delete table III and device class M references.

Make change to the physical die size under figure A-1. - ro

Add case outline Y. Add note under figure 1. - ro

DATE (YR-MO-DA)

96-11-06

98-12-03

99-04-19

00-04-21

00-08-01

02-11-27

07-02-06

07-04-25

12-12-14

13-06-03

APPROVED

R. MONNIN

J. RODENBECK

R. HEBER

C. SAFFLE

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Dan Wonnell

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

Sandra Rooney

APPROVED BY

Michael A. Frye

DRAWING APPROVAL DATE

95-11-13

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

http://www.landandmaritime.dla.mil

MICROCIRCUIT, LINEAR, RADIATION HARDNED,

LINE RECEIVER, QUAD DIFFERENTIAL

MONOLITHIC SILICON

SIZE

CAGE CODE

AMSC N/A

REVISION LEVEL

67268

SHEET

1 OF 23

5962-95689

DSCC FORM 2233

APR 97

5962-E364-13

1.3 Absolute maximum ratings. 1/

Supply voltage ...........................................................................................................

Differential input voltage ............................................................................................

Common mode range ................................................................................................

Enable pins input voltage ..........................................................................................

DC drain current (any one output) .............................................................................

DC diode input current enable pin .............................................................................

Storage temperature range ........................................................................................

Lead temperature (soldering, 10 seconds) ................................................................

Junction temperature (T

) ..........................................................................................

-0.5 V to +7.0 V

±12

-0.5 V to V

+ 0.5 V

±25

±20

-65°C to +150°C

+300°C

+175°C

Maximum package power dissipation at T

= +125°C:

Case outline E ........................................................................................................ 0.6 W

Case outlines X and Y ............................................................................................ 0.5 W

Maximum device power dissipation (P

) 2/ .............................................................. 0.32 W

Thermal resistance, junction-to-case (θ

Case outline E ........................................................................................................

Case outlines X and Y ............................................................................................

Thermal resistance, junction-to-ambient (θ

Case outline E ........................................................................................................

Case outlines X and Y ............................................................................................

1.4 Recommended operating conditions.

Operating voltage range:

Device type 01, 03 .................................................................................................

Device type 02, 04 .................................................................................................

Common mode range:

Device type 01, 03 .................................................................................................

Device type 02, 04 .................................................................................................

Input low voltage (V

) ...............................................................................................

20°C/W

26°C/W

80°C/W

103°C/W

+4.5 V to +5.5 V

+3.0 V to +3.6 V

±7.0

-4.0 V to +7.0 V

0 V to 0.3 V

max

Input high voltage (V

) ............................................................................................. V

to 0.7 V

min

Input rise and fall time ............................................................................................... 500 ns max

Ambient operating temperature range (T

) ............................................................... -55°C to +125°C

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

Maximum device power dissipation is defined as V

x I

and must withstand the added P

due to output current

test; I

at T

= +125°C.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-95689

SHEET

1.5 Radiation features

Maximum total dose available (dose rate = 50 – 300 rads(Si)/s):

Device types 01 and 02:

Device classes V or Q ........................................................................................

Device class T ....................................................................................................

Device types 03 and 04 .........................................................................................

Maximum total dose available (dose rate < 0.01 rad(Si)/s):

Device types 03 and 04 .........................................................................................

Single event phenomena (SEP):

300 krads(Si) 3/

100 krads(Si) 3/

300 krads(Si) 4/

50 krads(Si) 4/

No SEL effective at linear energy transients (LET) (see 4.4.4.5) ...........................

≤

100 [MeV/mg/cm ] 5/

Neutron irradiation test ............................................................................................ = 1 x 10

Dose rate survivability ............................................................................................ = 5 x 10

neutrons/cm

Dose rate induced upset ........................................................................................ = 5 x 10 rads(Si)/sec 5/

rads(Si)/sec 5/

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part

of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATION

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 -

MIL-STD-1835 -

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

DEPARTMENT OF DEFENSE HANDBOOKS

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

(Copies of these documents are available online at

http://quicksearch.dla.mil/

or from the Standardization Document Order

Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.

Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract.

ASTM INTERNATIONAL (ASTM)

ASTM F1192

Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion

Irradiation of semiconductor Devices.

(Copies of these documents are available online at

http://www.astm.org

or from ASTM International, 100 Barr Harbor Drive,

P.O. Box C700, West Conshohocken, PA, 19428-2959).

_____

3/ Device types 01 and 02 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose

rate effects. Device types 01 and 02 radiation end point limits for the noted parameters are guaranteed only for the

conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si) for device

classes V or Q and 100 krads(Si) for device class T.

4/ Device types 03 and 04 radiation end point limits for the noted parameters are guaranteed only for the conditions as

specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si), and condition D to a

maximum total dose of 50 krads(Si).

5/ Guaranteed by process or design, not tested.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-95689

SHEET

2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with

MIL-PRF-38535 as specified herein, or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein.

3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q, T and V.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Truth tables. The truth tables shall be as specified on figure 2.

3.2.4 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document

revision level control and shall be made available to the preparing and acquiring activity upon request.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the

full ambient operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table IA.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be

marked. Marking for device classes Q, T and V shall be in accordance with MIL-PRF-38535.

3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a "QML" or "Q" as required

in MIL-PRF-38535.

3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance shall be required from a QML-38535

listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance

submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this drawing shall affirm that the

manufacturer's product meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein.

3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535

shall be provided with each lot of microcircuits delivered to this drawing.

STANDARD

MICROCIRCUIT DRAWING

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-95689

SHEET

5962R9568902TXC Related Products

	5962R9568902TXC	5962R9568902TEC
Description	QUAD LINE RECEIVER, CDFP16, CERAMIC, DFP-16	QUAD LINE RECEIVER, CDIP16, SIDE BRAZED, CERAMIC, DIP-16
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	DFP	DIP
package instruction	DFP, FL16,.3	DIP, DIP16,.3
Contacts	16	16
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Input properties	DIFFERENTIAL SCHMITT TRIGGER	DIFFERENTIAL SCHMITT TRIGGER
Interface integrated circuit type	LINE RECEIVER	LINE RECEIVER
Interface standards	GENERAL PURPOSE	GENERAL PURPOSE
JESD-30 code	R-CDFP-F16	R-CDIP-T16
JESD-609 code	e4	e4
Number of functions	4	4
Number of terminals	16	16
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C
Maximum output low current	0.006 A	0.006 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DIP
Encapsulate equivalent code	FL16,.3	DIP16,.3
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	IN-LINE
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
Maximum receive delay	65 ns	65 ns
Number of receiver bits	4	4
Filter level	MIL-PRF-38535	MIL-PRF-38535
Maximum supply voltage	3.6 V	3.6 V
Minimum supply voltage	3 V	3 V
Nominal supply voltage	3.3 V	3.3 V
surface mount	YES	NO
technology	CMOS	CMOS
Temperature level	MILITARY	MILITARY
Terminal surface	GOLD	GOLD
Terminal form	FLAT	THROUGH-HOLE
Terminal pitch	1.27 mm	2.54 mm
Terminal location	DUAL	DUAL
total dose	100k Rad(Si) V	100k Rad(Si) V

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