5SLX12L2510 datasheet, PDF - EEWORLD Datasheet

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5SLX12L2510: DescriptionFast-Diode Die; CategoryDiscrete semiconductor diode; File Size80KB，3 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SLX12L2510 Overview

Fast-Diode Die

5SLX12L2510 Parametric

Parameter Name	Attribute value
Parts packaging code	DIE
package instruction	12.40 X 12.40 MM, DIE-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
application	FAST SOFT RECOVERY
Shell connection	CATHODE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	S-XXUC-N2
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum output current	100 A
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	2500 V
Maximum reverse recovery time	0.9 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	UNSPECIFIED
Base Number Matches	1

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RRM

2500 V

100 A

Fast-Diode Die

5SLX 12L2510

Die size: 12.4 x 12.4 mm

Doc. No. 5SYA1664-02 Feb. 05

•

Fast and soft reverse-recovery

Low losses

High SOA

Passivation: SIPOS Nitride plus Polyimide

Maximum rated values

Parameter

Symbol

RRM

FRM

Conditions

min

max

2500

100

Unit

°C

Repetitive peak reverse voltage

Continuous forward current

Repetitive peak forward current

Junction temperature

Limited by T

vjmax

-40

200

125

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2

Diode characteristic values

Parameter

Continuous forward voltage

Continuous reverse current

Peak reverse recovery current

Recovered charge

Reverse recovery time

Reverse recovery energy

Symbol

rec

Conditions

= 100 A

= 2500 V

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 100 A,

= 1250 V,

di/dt = 440 A/µs,

= 1200 nH,

Inductive load,

Switch:

2x 5SMX12L2510

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

min

1.4

typ

1.75

1.8

1.5

2.5

115

900

1150

max

2.0

Unit

µA

µC

Characteristic values according to IEC 60747 - 2

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

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