DSEC 60-03AQ
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
I
FAV
= 2x30 A
V
RRM
= 300 V
t
rr
= 30 ns
A
V
RSM
V
300
V
RRM
V
300
Type
A
C
TO-3 P
C (TAB)
DSEC 60-03AQ
A
C
A
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
F
C
Weight
Conditions
T
C
= 145°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
300
1.2
0.3
-55...+175
175
-55...+150
A
A
A
mJ
A
°C
°C
°C
W
Nm
N
g
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
T
C
= 25°C
mounting torque
mounting force with clip
typical
165
0.8...1.2
20...120
6
Symbol
I
R
①
Conditions
T
VJ
= 25°C V
R
= V
RRM
T
VJ
= 150°C V
R
= V
RRM
I
F
= 30 A;
T
VJ
= 150°C
T
VJ
= 25°C
Characteristic Values
typ.
max.
250
1
0.91
1.25
0.9
0.25
µA
mA
V
V
K/W
K/W
ns
7
A
V
F
②
R
thJC
R
thCH
t
rr
I
RM
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
30
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2004 IXYS All rights reserved
1-3
413
DSEC 60-03AQ
60
A
I
F
40
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
20
200
5
0
0.0
0
100
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
10
400
Q
r
800
T
VJ
= 100°C
nC
600
I
F
= 60A
I
F
= 30A
I
F
= 15A
15
V
R
= 150V
I
RM
20
I
F
= 60A
I
F
= 30A
I
F
= 15A
30
A
25
T
VJ
= 100°C
V
R
= 150V
0.5
1.0
V
F
V
1.5
Fig. 1 Forward current I
F
versus V
F
1.4
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
90
ns
T
VJ
= 100°C
V
R
= 150V
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
14
V
V
FR
12
t
fr
0.8
V
FR
0.6
10
0.4
0.2
8
0.0
600 A/µs 1000
800
di
F
/dt
T
VJ
= 100°C
I
F
= 30A
1.2
µs
1.0
t
fr
1.2
K
f
1.0
I
RM
t
rr
80
70
I
F
= 60A
60
Q
r
I
F
= 30A
I
F
= 15A
0.8
0.6
50
0.4
0
40
80
120 °C 160
T
VJ
40
0
200
400
600
-di
F
/dt
800
A/µs 1000
0
200
400
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.465
0.179
0.256
t
i
(s)
0.005
0.0003
0.04
0.1
Z
thJC
0.01
1
2
3
0.001
0.0001
0.00001
DSEP30-03A/DSEC 60-03A
DSEC 60-03AQ
NOTE: Fig. 2 to Fig. 6 shows typical values
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
IXYS reserves the right to change limits, Conditions and dimensions.
413
© 2004 IXYS All rights reserved
2-3
DSEC 60-03AQ
Dimensions in mm (1 mm = 0.0394)
SYM
A
A1
A2
b
b2
b4
c
D
D1
E
E1
e
L
L1
ØP
ØP1
S
MIN
MAX
MIN
MAX
IXYS reserves the right to change limits, Conditions and dimensions.
© 2004 IXYS All rights reserved
3-3
413
Analogue and Mixed Signal
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