V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
Dclink
=
=
=
=
=
=
4500
4000
25×10
3
2.1
0.58
2800
V
A
A
V
mΩ
V
Asymmetric Gate turn-off
Thyristor
5SGA 40L4501
Doc. No. 5SYA1208-02 March 05
•
Patented free-floating silicon technology
•
Low on-state and switching losses
•
Annular gate electrode
•
Industry standard housing
•
Cosmic radiation withstand rating
Blocking
Maximum rated values
1)
Parameter
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Permanent DC voltage for
100 FIT failure rate
Characteristic values
Symbol Conditions
V
DRM
V
RRM
V
DC-link
Ambient cosmic radiation at sea level
in open air.
V
GR
≥
2 V
min
typ
max
4500
17
2800
Unit
V
V
V
Parameter
Repetitive peak off-state
current
Repetitive peak reverse
current
Symbol Conditions
I
DRM
I
RRM
V
D
= V
DRM
, V
GR
≥
2 V
V
R
= V
RRM
, R
GK
=
∞ Ω
min
typ
max
100
50
Unit
mA
mA
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Characteristic values
Symbol Conditions
F
m
Symbol Conditions
D
p
H
m
D
s
Anode to Gate
± 0.1 mm
min
36
min
25.6
33
typ
40
typ
85
max
44
max
26.1
1.5
Unit
kN
Unit
mm
mm
kg
mm
mm
Parameter
Pole-piece diameter
Housing thickness
Weight
Surface creepage distance
Air strike distance
D
a
Anode to Gate
14
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SGA 40L4501
GTO Data
On-state
Maximum rated values
1)
Parameter
Max. average on-state
current
Max. peak non-repetitive
surge current
Limiting load integral
Max. peak non-repetitive
surge current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
Half sine wave, T
C
= 85 °C
min
typ
max
1000
1570
Unit
A
A
3
Max. RMS on-state current I
T(RMS)
I
TSM
I
2
t
I
TSM
I
2
t
Symbol Conditions
V
T
V
(T0)
r
T
I
H
1)
t
p
= 10 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
t
p
= 1 ms, T
vj
= 125°C, sine wave
After Surge: V
D
= V
R
= 0 V
25×10
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
A
3.1×10
40×10
6
3
800×10
min
typ
max
4.4
2.1
0.58
100
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
I
T
= 4000 A, T
vj
= 125°C
T
vj
= 125°C
I
T
= 400...5000 A
T
vj
= 25°C
Turn-on switching
Maximum rated values
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Min. on-time
Symbol Conditions
di
T
/dt
cr
di
T
/dt
cr
t
on
T
vj
= 125°C,
I
T
= 4000 A, I
GM
= 50 A,
di
G
/dt = 40 A/µs
f = 200 Hz
f = 1 Hz
min
typ
max
500
1000
Unit
A/µs
A/µs
µs
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 4000 A, di/dt = 300 A/µs,
I
GM
= 50 A, di
G
/dt = 40 A/µs,
C
S
= 6 µF, R
S
= 5
Ω
100
Characteristic values
Parameter
Turn-on delay time
Rise time
Turn-on energy per pulse
Symbol Conditions
t
d
t
r
E
on
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
I
T
= 4000 A, di/dt = 300 A/µs,
I
GM
= 50 A, di
G
/dt = 40 A/µs,
C
S
= 6 µF, R
S
= 5
Ω
min
typ
max
2.5
5
3.3
Unit
µs
µs
J
Turn-off switching
Maximum rated values
1)
Parameter
Max. controllable turn-off
current
Min. off-time
Symbol Conditions
I
TGQM
t
off
V
DM
≤
V
DRM
, di
GQ
/dt = 40 A/µs,
C
S
= 6 µF, L
S
≤
0.3 µH
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
≤
V
DRM
, di
GQ
/dt = 40 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5
Ω,
C
S
= 6 µF, L
S
= 0.3 µH
min
typ
max
4000
Unit
A
µs
100
Characteristic values
Parameter
Storage time
Fall time
Turn-on energy per pulse
Peak turn-off gate current
Symbol Conditions
t
S
t
f
E
off
I
GQM
V
D
= 0.5 V
DRM
, T
vj
= 125 °C
V
DM
≤
V
DRM
, di
GQ
/dt = 40 A/µs,
I
TGQ
= I
TGQM
,
R
S
= 5
Ω,
C
S
= 6 µF, L
S
= 0.3 µH
min
typ
max
27
3
14
1100
Unit
µs
µs
J
A
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05
page 2 of 9
5SGA 40L4501
Gate
Maximum rated values
1)
Parameter
Repetetive peak reverse
voltage
Repetetive peak reverse
current
Characteristic values
Symbol Conditions
V
GRM
I
GRM
V
GR
= V
GRM
min
typ
max
17
50
Unit
V
mA
Parameter
Gate trigger voltage
Gate trigger current
Symbol Conditions
V
GT
I
GT
1)
min
typ
1.2
4
max
Unit
V
A
T
vj
= 25°C,
V
D
= 24 V, R
A
= 0.1
Ω
Thermal
Maximum rated values
Parameter
Junction operating temperature
Storage temperature range
Characteristic values
Symbol
T
vj
T
stg
Symbol
R
th(j-c)
R
th(j-c)A
R
th(j-c)C
Conditions
min
-40
-40
typ
max
125
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Parameter
Thermal resistance junction to case
Conditions
Double side cooled
Anode side cooled
Cathode side cooled
Single side cooled
Double side cooled
min
typ
max
11
20
25
6
3
Thermal resistance case to heatsink
(Double side cooled)
R
th(c-h)
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j - c)
(t) =
∑
R
i
(1 - e
- t/
τ
i
)
i
=
1
2
1.974
0.0939
i
R
i
(K/kW)
τ
i
(s)
1
7.313
0.5400
3
1.218
0.0117
4
0.501
0.0036
Fig. 1
Transient thermal impedance, junction to case
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05
page 3 of 9
5SGA 40L4501
Fig. 2
On-state characteristics
Fig. 3
Average on-state power dissipation vs.
average on-state current
Fig. 4
Surge current and fusing integral vs. pulse
width
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05
page 4 of 9
5SGA 40L4501
Fig. 5
Forward blocking voltage vs. gate-cathode
resistance
Fig. 6
Static dv/dt capability; forward blocking
voltage vs. neg. gate voltage or gate cathode
resistance
Fig. 7
Forward gate current vs. forard gate voltage
Fig. 8
Gate trigger current vs. junction temperature
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1208-02 March 05
page 5 of 9
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