V
DRM
I
TGQM
I
TSM
V
T0
r
T
V
DClink
=
=
=
=
=
=
5500
280
1.8
1.95
7.2
3300
V
A
kA
V
mΩ
Ω
V
Reverse Conducting Integrated
Gate-Commutated Thyristor
5SHX 03D6004
Doc. No. 5SYA1225-03 Jan. 02
•
Direct fiber optic control
•
Fast response (t
don
< 3 µs, t
doff
< 6 µs)
•
Precise timing (∆t
doff
< 800 ns)
∆
•
Patented free floating silicon technology
•
Optimized low On-state and switching losses
•
Very high EMI immunity
•
Cosmic radiation withstand rating
Blocking
V
DRM
I
DRM
V
DClink
Repetitive peak off-state voltage
Repetitive peak off-state current
Permanent DC voltage for 100
FIT failure rate
≤
5500 V
20 mA
3300 V
V
GR
≥
2V
V
D
= V
DRM
V
GR
≥
2V
0
≤
T
j
≤
115 °C. Ambient cosmic
radiation at sea level in open air.
Mechanical data
F
m
D
p
H
m
D
s
D
a
l
h
w
(see Fig. 9)
min.
max.
10 kN
14 kN
34 mm
26 mm
0.55 kg
≥
≥
33 mm
13 mm
202.5 mm
46.5 mm
200 mm
+0/-0.5 mm
±1.0 mm
+0/-0.5 mm
±0.1 mm
±0.5 mm
Mounting force
Pole-piece diameter
Housing thickness
Weight IGCT
Surface creepage distance
Air strike distance
Length IGCT
Height IGCT
Width IGCT
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SHX 03D6004
GCT Data
On-state
(see Fig. 1)
I
TAVM
I
TRMS
I
TSM
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive
surge current
Limiting load integral
On-state voltage
Threshold voltage
Slope resistance
≤
110 A
170 A
1.8 kA
3.6 kA
16.9x10
3
A
2
s
6.6x10
3
A
2
s
3.95 V
1.95 V
7.2 mΩ
t
p
t
p
t
p
t
p
I
T
I
T
=
=
=
=
=
=
10 ms
1 ms
10 ms
1 ms
280 A
100 - 500 A
T
j
= 115 °C
T
j
= 115 °C
After surge:
V
D
= V
R
= 0V
Half sine wave, T
C
= 85 °C
It
V
T
V
T0
r
T
2
Turn-on switching
di/dt
crit
t
don
t
r
t
on (min)
E
on
Max. rate of rise of on-state
current
Turn-on delay time
Rise time
Min, on-time
Turn-on energy per pulse
≤
≤
≤
90 A/µs
3 µs
1 µs
10 µs
0.15 J
f
I
T
V
D
I
T
R
S
=
=
=
=
=
500 Hz
280 A
3300 V
280 A
5.2
Ω
0.5 µF
T
j
T
j
L
i
=
=
=
115 °C
115 °C
75 A/µs
44.5 µH
1 µH
V
D
= 3900 V
di/dt =
L
CL
=
C
CL
=
Turn-off switching
(see Fig. 2, 3)
I
TGQM
t
doff
t
f
t
off (min)
E
off
Max. controllable turn-off current
Turn-off delay time
Fall time
Min. off-time
Turn-off energy per pulse
≤
≤
≤
280 A
6 µs
1 µs
10 µs
1.5 J
V
DM
≤
V
DRM
V
D
V
D
T
j
=
=
=
3300 V
3300 V
115 °C
I
TGQM
T
j
=
115 °C
1 µH
V
DRM
5.2
Ω
44.5 µH
1 µH
L
CL
≤
V
DM
≤
R
s
L
i
=
=
I
TGQ
=
C
CL
=
0.5 µF L
CL
≤
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 2 of 9
5SHX 03D6004
Diode Data
On-state
(see Fig. 4)
I
FAVM
I
FRMS
I
FSM
I
2
t
V
F
V
F0
r
F
Max. average on-state current
Max. RMS on-state current
Max. peak non-repetitive surge
current
Limiting load integral
On-state voltage
Threshold voltage
Slope resistance
≤
65 A
100 A
1.9 kA
4.4 kA
2
18.2×10
3
A s
2
9.6×10
3
A s
Half sine wave, T
C
= 85 °C
t
p
t
p
t
p
t
p
I
F
I
F
=
=
=
=
=
=
10 ms T
j
=
115 °C
1 ms After surge:
10 ms V
F
= V
R
= 0V
1 ms
280 A
100 - 500 A
T
j
=
115 °C
6.5
V
3.52 V
10.7 mΩ
Turn-off switching
(see Fig. 5, 6)
di/dt
crit
I
rr
E
rr
Max. rate of rise of on-state
current
Reverse recovery current
Turn-off energy
≤
≤
90 A/µs
170 A
0.8 J
I
F
=
280 A
3900 V
3300 V
5.2
Ω
0.5 µF
I
F
=
L
i
=
L
CL
=
280 A
115 °C
44.5 µH
1 µH
75 A/µs T
j
=
T
j
=
115 °C
V
CL
=
V
CL
=
di/dt =
R
s
=
C
CL
=
Gate Unit
Power supply
(see Fig. 9 to 11)
V
GDC
P
Gin
Gate Unit voltage
Gate Unit power consumption
20
±0.5
V
DC
≤
11 W
Without galvanic isolation to power
circuit.
f
S
= 500 Hz, I
TGQ AV
= 115 A,
δ
= 0.9
X1
Gate Unit power connector
WAGO, Part Number 231-532/001-000
Note 1
Optical control input/output
(see Fig. 9 to 11)
P
on CS
P
off CS
t
GLITCH
CS
Optical input power
Optical noise power
Pulse width threshold
Receiver for command signal
>
<
≤
-20 dBm Valid for 1mm plastic optical fibre
-45 dBm (POF)
450 ns
Max. pulse width without response
Agilent, Type HFBR-2528
Note 2
Note 1: WAGO, www.wago.com
Note 2: Agilent Technologies, www.semiconductor.agilent.com
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 3 of 9
5SHX 03D6004
Thermal
T
jop
T
stg
T
amb
R
thJC
GCT
R
thJC
Diode
R
thCH
GCT
R
thCH
Diode
Operating junction temperature range
Storage temperature range
Ambient operational temperature range
Diode not dissipating
GCT not dissipating
Diode not dissipating
GCT not dissipating
≤
≤
≤
≤
0…115
-40…60
0…60
°C
°C
°C
Thermal resistance junction to case
70 K/kW Double side cooled
90 K/kW
16 K/kW Double side cooled
16 K/kW
Thermal resistance case to heatsink
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 4 of 9
5SHX 03D6004
GCT Part
I
T
[A]
600
T
j
= 115°C
E
off
[J]
1.5
T
j
= 115 °C
500
400
1.0
V
D
= 3300V
300
200
0.5
100
0
2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0
V
T
[V]
0.0
0
100
200
300
I
TGQ
[A]
Fig. 1
GCT on-state characteristics.
Fig. 2
GCT turn-off energy per pulse vs.
turn-off current.
I
TGQ
[A]
300
T
j
= 0..115 °C
V
DM
≤
V
DRM
V
RM
≤
V
RRM
200
L
i
= 44.5
µ
H
C
CL
= 0.5
µ
F
L
CL
= 1.0
µ
H
R
s
= 5.2
Ω
100
0
0
1000
2000
3000
4000
5000
V
D
[V]
Fig. 3
Max. repetitive GCT turn-off current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1225-03 Jan. 02
page 5 of 9
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