V
DRM
V
DSM
I
T(AV)M
I
T(RMS)
I
TSM
V
(T0)
r
T
=
=
=
=
=
=
=
5600
6500
350
550
4.5×10
3
1.2
2.3
V
V
A
A
A
V
mΩ
Phase Control Thyristor
5STP 03X6500
Doc. No. 5SYA1003-04 Oct. 04
•
•
•
•
•
Patented free-floating silicon technology
Low on-state and switching losses
Designed for traction, energy and industrial applications
Optimum power handling capability
Interdigitated amplifying gate
Blocking
Maximum rated values
1)
Symbol
V
DSM,
V
RSM
V
DRM,
V
RRM
V
RSM
dV/dt
crit
Parameter
Conditions
f = 5 Hz, t
p
= 10 ms
f = 50 Hz, t
p
= 10 ms
t
p
= 5 ms, single pulse
Exp. to 3750 V, T
vj
= 125°C
Symbol Conditions
I
DSM
I
RSM
5STP 03X6500
6500 V
5600 V
7000 V
5STP 03X6200
6200 V
5300 V
6700 V
1000 V/µs
min
typ
5STP 03X5800
5800 V
4900 V
6300 V
Characteristic values
max
150
150
Unit
mA
mA
Forward leakage current
Reverse leakage current
V
DSM
, T
vj
= 125°C
V
RSM
, T
vj
= 125°C
V
DRM
/ V
RRM
are equal to V
DSM
/ V
RSM
values up to T
vj
= 110°C
Mechanical data
Maximum rated values
1)
Parameter
Mounting force
Acceleration
Acceleration
Characteristic values
Symbol Conditions
F
M
a
a
Device unclamped
Device clamped
min
8
typ
10
max
12
50
100
Unit
kN
m/s
m/s
Unit
kg
mm
mm
mm
2
2
Parameter
Weight
Housing thickness
Surface creepage distance
Symbol Conditions
m
H
D
S
F
M
= 10 kN, T
a
= 25 °C
min
34.8
38
typ
max
0.4
35.4
Air strike distance
D
a
21
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 03X6500
On-state
Maximum rated values
1)
Parameter
Average on-state current
RMS on-state current
Peak non-repetitive surge
current
Limiting load integral
Peak non-repetitive surge
current
Limiting load integral
Characteristic values
Symbol Conditions
I
T(AV)M
I
T(RMS)
I
TSM
It
I
TSM
It
Symbol Conditions
V
T
V
(T0)
r
T
I
H
I
L
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
I
T
= 1000 A, T
vj
= 125 °C
I
T
= 300 A - 900 A, T
vj
= 125 °C
2
2
min
typ
max
350
550
4.5×10
3
Unit
A
A
A
A
2
s
A
A
2
s
Unit
V
V
mΩ
mA
mA
mA
mA
Half sine wave, T
c
= 70°C
tp = 10 ms, T
vj
= 125 °C,
V
D
= V
R
= 0 V
tp = 8.3 ms, T
vj
= 125 °C,
V
D
= V
R
= 0 V
101×10
3
3
4.85×10
98×10
min
typ
max
3.5
1.2
2.3
80
60
500
200
3
Parameter
On-state voltage
Threshold voltage
Slope resistance
Holding current
Latching current
Switching
Maximum rated values
1)
Parameter
Critical rate of rise of on-
state current
Critical rate of rise of on-
state current
Symbol Conditions
di/dt
crit
di/dt
crit
T
vj
= 125 °C,
I
TRM
= 1000 A,
V
D
≤
3750 V,
I
FG
= 2 A, t
r
= 0.5 µs
Cont.
f = 50 Hz
Cont.
f = 1Hz
min
typ
max
100
1000
Unit
A/µs
A/µs
µs
Circuit-commutated turn-off t
q
time
Characteristic values
T
vj
= 125°C, I
TRM
= 1000 A,
V
R
= 200 V, di
T
/dt = -1 A/µs,
V
D
≤
0.67⋅V
DRM
, dv
D
/dt = 20V/µs
700
Parameter
Recovery charge
Symbol Conditions
Q
rr
T
vj
= 125°C, I
TRM
= 1000 A,
V
R
= 200 V,
di
T
/dt = -1 A/µs
V
D
= 0.4⋅V
RM
, I
FG
= 2 A,
t
r
= 0.5 µs, T
vj
= 25 °C
min
900
typ
max
2000
Unit
µAs
Gate turn-on delay time
t
gd
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Oct. 04
page 2 of 6
5STP 03X6500
Triggering
Maximum rated values
1)
Parameter
Peak forward gate voltage
Peak forward gate current
Peak reverse gate voltage
Average gate power loss
Characteristic values
Symbol Conditions
V
FGM
I
FGM
V
RGM
P
G(AV)
Symbol Conditions
V
GT
I
GT
V
GD
I
GD
T
vj
= 25 °C
T
vj
= 25 °C
V
D
= 0.4 x V
DRM
, T
vj
= 125 °C
V
D
= 0.4 x V
DRM
, T
vj
= 125°C
min
typ
max
12
10
10
Unit
V
A
V
see Fig. 9
min
typ
max
2.6
400
0.3
10
Unit
V
mA
V
mA
Parameter
Gate-trigger voltage
Gate-trigger current
Gate non-trigger voltage
Gate non-trigger current
Thermal
Maximum rated values
1)
Parameter
Operating junction
temperature range
Characteristic values
Symbol Conditions
T
vj
min
typ
max
125
Unit
°C
°C
Unit
K/kW
K/kW
K/kW
K/kW
K/kW
Storage temperature range T
stg
Parameter
Symbol Conditions
Double-side cooled
F
m
= 8...12 kN
Anode-side cooled
F
m
= 8...12 kN
Cathode-side cooled
F
m
= 8...12 kN
Double-side cooled
F
m
= 8...12 kN
Single-side cooled
F
m
= 8...12 kN
-40
min
typ
140
max
45
85
95
7.5
15
Thermal resistance junction R
th(j-c)
to case
R
th(j-c)A
R
th(j-c)C
Thermal resistance case to R
th(c-h)
heatsink
R
th(c-h)
Analytical function for transient thermal
impedance:
Z
th(j-c)
(t) =
∑
R
th i
(1 - e
-t/
τ
i
)
i
=
1
i
R
th i
(K/kW)
τ
i
(s)
1
26.070
0.6439
2
12.160
0.0812
3
3.370
0.0161
4
3.100
0.0075
Fig. 1
Transient thermal impedance junction-to case.
n
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Oct. 04
page 3 of 6
5STP 03X6500
Fig. 2
Max. on-state voltage characteristics
Fig. 3
On-state characteristics.
T
j
=125°C, 10ms half sine
Fig. 4
On-state power dissipation vs. mean on-state
current. Turn-on losses excluded.
Fig. 5
Max. permissible case temperature vs. mean
on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Oct. 04
page 4 of 6
5STP 03X6500
Fig. 6
Surge on-state current vs. pulse length. Half-
sine wave.
I
G
(t)
100 %
90 %
I
GM
I
GM
I
Gon
di
G
/dt
t
r
t
p
(I
GM
)
≈
2..5 A
≥
1.5 I
GT
≥
2 A/µs
≤
1
µs
≈
5...20
µs
Fig. 7
Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
di
G
/dt
10 %
t
r
t
p
(I
GM
)
t
p
(I
Gon
)
t
I
Gon
Fig. 8
Recommended gate current waveform.
Fig. 9
Max. peak gate power loss.
Fig. 10
Recovery charge vs. decay rate of on-state
current.
Fig. 11
Peak reverse recovery current vs. decay rate
of on-state current.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Oct. 04
page 5 of 6
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