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Datasheet> All Categories > storage> storage> M5M51016BTP-70LL-I
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M5M51016BTP-70LL-I

Description
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
Categorystorage    storage   
File Size52KB，7 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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M5M51016BTP-70LL-I Overview

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

M5M51016BTP-70LL-I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMitsubishi
Parts packaging codeTSOP2
package instructionTSOP2, TSOP44,.46,32
Contacts44
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum access time70 ns
I/O typeCOMMON
JESD-30 codeR-PDSO-G44
JESD-609 codee0
length18.41 mm
memory density1048576 bi
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals44
word count65536 words
character code64000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Encapsulate equivalent codeTSOP44,.46,32
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.00002 A
Minimum standby current2 V
Maximum slew rate0.1 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
Base Number Matches1

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Download Datasheet
9 9 Jul ,1997
Jul ,1997
MITSUBISHI LSIs
MITSUBISHI LSIs
M5M51016BTP,RT-70L,-10L-I,
M5M51016BTP,RT-70L,-10L-I,
-70LL,-10LL-I
-70LL,-10LL-I
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
DESCRIPTION
The M5M51016BTP, RT are a 1048576-bit CMOS static RAM
organized as 65536 word by 16-bit which are fabricated using
high-performance triple polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery result in a high
density and low power static RAM.
They are low stand-by current and low operation current and ideal
for the battery back-up application.
The M5M51016BTP,RT are packaged in a 44-pin thin small
outline package which is a high reliability and high density surface
mount device (SMD). Two types of devices are available.
M5M51016BTP(normal lead bend type package), M5M51016BRT
(reverse lead bend type package). Using both types of devices, it
becomes very easy to design a printed circuit board.
PIN CONFIGURATION (TOP VIEW)
NC
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
CHIP SELECT
INPUT
CS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
BC
1
BC
2
A
14
A
15
BYTE
CONTROL
INPUTS
ADDRESS
INPUTS
ADDRESS
INPUTS
FEATURES
Power supply current
Type name
M5M51016BTP,RT-70L
M5M51016BTP,RT-10L
M5M51016BTP,RT-70LL
M5M51016BTP,RT-10LL
Access time
(max)
Active
(max)
stand-by
(max)
200µA
(V
CC
= 5.5V)
70ns
100ns
30mA
(1MHz)
70ns
100ns
40µA
(V
CC
= 5.5V)
0.3µA
(V
CC
= 3.0V,
typ)
Single +5.0V power supply
Low stand-by current 0.3µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by CS, BC
1
& BC
2
Data hold on +2V power supply
Three-state outputs : OR-tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51016BTP,RT .............................. 44pin 400mil TSOP(II)
(0V)GND
OUTPUT ENABLE
INPUT
OE
NC
DQ
1
DQ
2
DQ
3
DATA
DQ
4
INPUTS/
OUTPUTS
DQ
5
DQ
6
DQ
7
DQ
8
A
13
WRITE
CONTROL
W
INPUTS
A
8
A
9
ADDRESS
INPUTS
A
11
A
10
GND(0V)
NC
DQ
16
DQ
15
DQ
14
DQ
13
DATA
INPUTS/
DQ
12
OUTPUTS
DQ
11
DQ
10
DQ
9
V
CC
(5V)
Outline 44P3W - H (400mil TSOP Normal Bend)
M5M51016BTP
APPLICATION
Small capacity memory units
NC
BYTE
BC
1
CONTROL
INPUTS
BC
2
A
14
ADDRESS
INPUTS
A
15
A
13
WRITE
CONTROL
W
INPUTS
A
8
ADDRESS
A
9
INPUTS
A
11
A
10
(0V)GND
NC
DQ
16
DQ
15
DQ
14
DATA
DQ
13
INPUTS/
OUTPUTS
DQ
12
DQ
11
DQ
10
DQ
9
(5V)V
CC
44
43
42
41
40
39
38
37
1
2
3
4
5
6
7
8
36
35
34
33
32
31
30
29
28
27
26
25
24
23
9
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
A
12
A
7
A
6
A
5
ADDRESS
A
4
INPUTS
A
3
A
2
A
1
A
0
CHIP SELECT
CS
INPUT
GND(0V)
OUTPUT ENABLE
OE
INPUT
NC
DQ
1
DQ
2
DQ
3
DQ
4
DATA
INPUTS/
DQ
5
OUTPUTS
DQ
6
DQ
7
DQ
8
Outline 44P3W - J (400mil TSOP Reverse Bend)
NC : NO CONNECTION
M5M51016BRT
MITSUBISHI
ELECTRIC
1

M5M51016BTP-70LL-I Related Products

M5M51016BTP-70LL-I M5M51016BTP-10L-I M5M51016BTP-10LL-I M5M51016BTP-70L M5M51016BTP-70L-I M5M51016RT-70LL-I M5M51016RT-70L-I M5M51016RT-10L-I M5M51016RT-10LL-I
Description 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead - - - -
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible - - - -
Maker Mitsubishi Mitsubishi Mitsubishi Mitsubishi Mitsubishi - - - -
Parts packaging code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 - - - -
package instruction TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 TSOP2, TSOP44,.46,32 - - - -
Contacts 44 44 44 44 44 - - - -
Reach Compliance Code unknow unknow unknow unknow unknow - - - -
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 - - - -
Is Samacsys N N N N N - - - -
Maximum access time 70 ns 100 ns 100 ns 70 ns 70 ns - - - -
I/O type COMMON COMMON COMMON COMMON COMMON - - - -
JESD-30 code R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 - - - -
JESD-609 code e0 e0 e0 e0 e0 - - - -
length 18.41 mm 18.41 mm 18.41 mm 18.41 mm 18.41 mm - - - -
memory density 1048576 bi 1048576 bi 1048576 bi 1048576 bi 1048576 bi - - - -
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM - - - -
memory width 16 16 16 8 16 - - - -
Number of functions 1 1 1 1 1 - - - -
Number of terminals 44 44 44 44 44 - - - -
word count 65536 words 65536 words 65536 words 131072 words 65536 words - - - -
character code 64000 64000 64000 128000 64000 - - - -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS - - - -
Maximum operating temperature 85 °C 85 °C 85 °C 70 °C 85 °C - - - -
organize 64KX16 64KX16 64KX16 128KX8 64KX16 - - - -
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE - - - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - - - -
encapsulated code TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 - - - -
Encapsulate equivalent code TSOP44,.46,32 TSOP44,.46,32 TSOP44,.46,32 TSOP44,.46,32 TSOP44,.46,32 - - - -
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - - - -
Package form SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE - - - -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL - - - -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - - -
power supply 5 V 5 V 5 V 5 V 5 V - - - -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - - - -
Maximum seat height 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm - - - -
Maximum standby current 0.00002 A 0.0001 A 0.00002 A 0.00005 A 0.0001 A - - - -
Minimum standby current 2 V 2 V 2 V 2 V 2 V - - - -
Maximum slew rate 0.1 mA 0.1 mA 0.1 mA 0.1 mA 0.1 mA - - - -
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V - - - -
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V - - - -
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V - - - -
surface mount YES YES YES YES YES - - - -
technology CMOS CMOS CMOS MIXMOS CMOS - - - -
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL INDUSTRIAL - - - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - - - -
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING - - - -
Terminal pitch 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm - - - -
Terminal location DUAL DUAL DUAL DUAL DUAL - - - -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - - - -
width 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm - - - -
Base Number Matches 1 1 1 1 1 - - - -

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