MIG75J6CSB1W
MITSUBISHI SEMICONDUCTOR <Intelligent Power Module>
MIG75J6CSB1W
(600V/75A 6in1)
High Power Switching Applications
Motor Control Applications
•
•
•
•
•
Integrates inverter and control circuits (IGBT drive units, and units for protection against short-circuit current,
overcurrent, undervoltage and overtemperature) into a single package.
The electrodes are isolated from case.
Low thermal resistance
V
CE (sat)
= 1.8 V (typ.)
UL recognized: File No. E87989
Equivalent Circuit
20
19
18
17
16
15
14
13
12 11 10
9
8
7
6
5
4
3
2
1
FO IN V
D
GND
FO IN V
D
GND
FO IN V
D
GND
GND IN FO V
D
GND IN FO V
D
GND IN FO V
D
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
GND
V
S
OUT
W
1.
8.
15.
V
D
(U)
GND (V)
Open
2.
9.
16.
FO (U)
V
D
(W)
Open
V
3.
10.
17.
IN (U)
FO (W)
IN (X)
4.
11.
18.
U
GND (U)
IN (W)
IN (Y)
5.
12.
19.
B
V
D
(V)
GND (W)
IN (Z)
6.
13.
20.
FO (V)
V
D
(L)
GND (L)
N
7.
14.
IN (V)
FO (L)
P
2004-10-01
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MIG75J6CSB1W
Package Dimensions
1.
7.
13.
19.
V
D
(U)
IN (V)
V
D
(L)
IN (Z)
2.
8.
14.
20.
FO (U)
GND (V)
FO (L)
GND (L)
3.
9.
15.
IN (U)
V
D
(W)
Open
4.
10.
16.
GND (U)
FO (W)
Open
5.
11.
17.
V
D
(V)
IN (W)
IN (X)
6.
12.
18.
FO (V)
GND (W)
IN (Y)
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MIG75J6CSB1W
Signal Terminal Layout
1.
7.
13.
19.
V
D
(U)
IN (V)
V
D
(L)
IN (Z)
2.
8.
14.
20.
FO (U)
GND (V)
FO (L)
GND (L)
3.
9.
15.
IN (U)
V
D
(W)
Open
4.
10.
16.
GND (U)
FO (W)
Open
5.
11.
17.
V
D
(V)
IN (W)
IN (X)
6.
12.
18.
FO (V)
GND (W)
IN (Y)
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MIG75J6CSB1W
Maximum Ratings
(T
j
=
25°C)
Stage
Characteristics
Supply voltage
Collector-emitter voltage
Inverter
Collector current
Forward current
Collector power dissipation
Junction temperature
Control supply voltage
Control
Input voltage
Fault output voltage
Fault output current
Operating temperature
Storage temperature range
Module
Isolation voltage
Screw torque (terminal)
Screw torque (mounting)
AC 1 min
M4
M5
Tc
=
25°C, DC
Tc
=
25°C, DC
Tc
=
25°C, DC
⎯
V
D
-GND Terminal
IN-GND Terminal
FO-GND Terminal
FO sink current
⎯
⎯
Condition
P-N power terminal
⎯
Symbol
V
CC
V
CES
I
C
I
F
P
C
T
j
V
D
V
IN
V
FO
I
FO
Tc
T
stg
V
ISO
⎯
⎯
Ratings
450
600
75
75
460
150
20
20
20
14
−20
to
+100
−40
to
+125
2500
2
3
Unit
V
V
A
A
W
°C
V
V
V
mA
°C
°C
V
N½m
N½m
Electrical Characteristics
1. Inverter Stage
Characteristics
Collector cut-off current
Symbol
I
CEX
Test Condition
V
CE
=
600 V
V
D
=
15 V
I
C
=
75 A
V
IN
=
15 V
→
0 V
I
F
=
75 A, T
j
=
25°C
V
CC
=
300 V, I
C
=
75 A
V
D
=
15 V, V
IN
=
15 V
↔
0 V
T
j
=
25°C, Inductive load
(Note 1)
T
j
=
25°C
T
j
=
125°C
T
j
=
25°C
T
j
=
125°C
Min
⎯
⎯
1.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
1.8
2.0
1.8
1.3
0.25
0.2
1.1
0.2
Max
1
10
2.2
⎯
2.2
2.2
⎯
⎯
2.1
⎯
µs
V
V
Unit
mA
Collector-emitter saturation voltage
Forward voltage
V
CE (sat)
V
F
t
on
t
c (on)
Switching time
t
rr
t
off
t
c (off)
Note 1: Switching time test circuit and timing chart
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MIG75J6CSB1W
2. Control Stage
(T
j
=
25°C)
Characteristics
Control circuit current
Input on signal voltage
Input off signal voltage
Protection
Fault output current
Normal
Over current protection
trip level
Short circuit protection
trip level
Over current cut-off time
Over temperature
protection
Control supply under
voltage protection
Fault output pulse width
Trip level
Reset level
Trip level
Reset level
Inverter
Inverter
High side
Low side
Symbol
I
D (H)
I
D (L)
V
IN (on)
V
IN (off)
I
FO (on)
I
FO (off)
OC
SC
t
off (OC)
OT
OTr
UV
UVr
t
FO
V
D
=
15 V
⎯
V
D
=
15 V
Test Condition
Min
⎯
⎯
1.4
2.2
⎯
⎯
120
120
⎯
110
⎯
11.0
12.0
1
Typ.
13
39
1.6
2.5
10
⎯
⎯
⎯
5
118
98
12.0
12.5
2
Max
17
51
1.8
2.8
12
mA
0.1
⎯
⎯
⎯
125
⎯
12.5
13.0
3
ms
A
A
µs
°C
V
V
Unit
mA
V
D
=
15 V
V
D
=
15 V
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V, T
j
<
125°C
=
V
D
=
15 V
Case temperature
V
3. Thermal Resistance
(Tc
=
25°C)
Characteristics
Junction to case thermal resistance
Case to fin thermal resistance
Symbol
R
th (j-c)
R
th (c-f)
Test Condition
Inverter IGBT
Inverter FRD
Compound is applied
Min
⎯
⎯
⎯
Typ.
⎯
⎯
0.017
Max
0.270
0.313
⎯
°C/W
Unit
°C/W
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Microcontroller MCU
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