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8PH05

Description
8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size86KB,2 Pages
ManufacturerEDI [Electronic devices inc.]
Download Datasheet Parametric Compare View All

8PH05 Overview

8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE

8PH05 Parametric

Parameter NameAttribute value
MakerEDI [Electronic devices inc.]
package instructionR-PSFM-W4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresUL RECOGNIZED
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSFM-W4
Maximum non-repetitive peak forward current300 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
8PH
SINGLE-PHASE FULL WAVE BRIDGE
8 AMPERES
FOR P.C. BOARD AND HEAT SINK MOUNTING
t
e componen
ion under th
gnit
dicates reco
s, inc.
This mark in derwriters Laboratorie
Un
program of
PRV/Leg
Type No.
50V
8PH05
100V
8PH10
200V
8PH20
400V
8PH40
600V
8PH60
800V
8PH80
1000V
8PH100
ELECTRICAL CHARACTERISTICS PER LEG
(at T
A
=25 C Unl es s Oth erw ise Spe ci fie d)
Average Output Current. lo @65 C Tc (Fig.1)
Max. Forward Voltage Drop, VF=1.0 V @
I
F
=
Max.DC Reverse Current @ PRV, I
R
Max.DC Reverse Current @ PRV,and 100
O
C,
I
R
Max.Peak Surge Current, I
FSM
Thermal Resistance , R
0
j-c
Ambient Operating Temperature Range,T
A
Storge TemperatureRange,T
STG
(8.3ms) (Fig.2)
O
8
2.5
10
300
300
5.8
-55 to +150
-55 to +150
Amp
Amp
A
A
Amp
o
C/ W
o
C
C
o
Note 1:Derate Io by 20% for capacitive loads
EDI reserves the right to change these specifications at any time without notice

8PH05 Related Products

8PH05 8PH 8PH20 8PH40
Description 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Maker EDI [Electronic devices inc.] - EDI [Electronic devices inc.] EDI [Electronic devices inc.]
package instruction R-PSFM-W4 - R-PSFM-W4 R-PSFM-W4
Reach Compliance Code unknow - unknow unknow
Other features UL RECOGNIZED - UL RECOGNIZED UL RECOGNIZED
Shell connection ISOLATED - ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON - SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V - 1 V 1 V
JESD-30 code R-PSFM-W4 - R-PSFM-W4 R-PSFM-W4
Maximum non-repetitive peak forward current 300 A - 300 A 300 A
Number of components 4 - 4 4
Phase 1 - 1 1
Number of terminals 4 - 4 4
Maximum operating temperature 150 °C - 150 °C 150 °C
Maximum output current 8 A - 8 A 8 A
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified - Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 50 V - 200 V 400 V
surface mount NO - NO NO
Terminal form WIRE - WIRE WIRE
Terminal location SINGLE - SINGLE SINGLE
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