8PH20 datasheet, PDF - EEWORLD Datasheet

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8PH20: Description8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size86KB，2 Pages; ManufacturerEDI [Electronic devices inc.]

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8PH20 Overview

8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

8PH20 Parametric

Parameter Name	Attribute value
Maker	EDI [Electronic devices inc.]
package instruction	R-PSFM-W4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PSFM-W4
Maximum non-repetitive peak forward current	300 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE

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8PH

SINGLE-PHASE FULL WAVE BRIDGE

8 AMPERES

FOR P.C. BOARD AND HEAT SINK MOUNTING

e componen

ion under th

gnit

dicates reco

s, inc.

This mark in derwriters Laboratorie

program of

PRV/Leg

Type No.

50V

8PH05

100V

8PH10

200V

8PH20

400V

8PH40

600V

8PH60

800V

8PH80

1000V

8PH100

ELECTRICAL CHARACTERISTICS PER LEG

(at T

=25 C Unl es s Oth erw ise Spe ci fie d)

Average Output Current. lo @65 C Tc (Fig.1)

Max. Forward Voltage Drop, VF=1.0 V @

Max.DC Reverse Current @ PRV, I

Max.DC Reverse Current @ PRV,and 100

Max.Peak Surge Current, I

FSM

Thermal Resistance , R

j-c

Ambient Operating Temperature Range,T

Storge TemperatureRange,T

STG

(8.3ms) (Fig.2)

2.5

300

5.8

-55 to +150

Amp

C/ W

Note 1:Derate Io by 20% for capacitive loads

EDI reserves the right to change these specifications at any time without notice

8PH20 Related Products

	8PH20	8PH	8PH05	8PH40
Description	8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	EDI [Electronic devices inc.]	-	EDI [Electronic devices inc.]	EDI [Electronic devices inc.]
package instruction	R-PSFM-W4	-	R-PSFM-W4	R-PSFM-W4
Reach Compliance Code	unknow	-	unknow	unknow
Other features	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED
Shell connection	ISOLATED	-	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	-	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	-	1 V	1 V
JESD-30 code	R-PSFM-W4	-	R-PSFM-W4	R-PSFM-W4
Maximum non-repetitive peak forward current	300 A	-	300 A	300 A
Number of components	4	-	4	4
Phase	1	-	1	1
Number of terminals	4	-	4	4
Maximum operating temperature	150 °C	-	150 °C	150 °C
Maximum output current	8 A	-	8 A	8 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	-	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	-	50 V	400 V
surface mount	NO	-	NO	NO
Terminal form	WIRE	-	WIRE	WIRE
Terminal location	SINGLE	-	SINGLE	SINGLE

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