6 A, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| Maker | EDI [Electronic devices inc.] |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V |
| JESD-30 code | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 1000 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Maximum output current | 6 A |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 50 V |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |

| ZAB005 | ZAB | ZAB010 | ZAB020 | ZAB100 | ZAB080 | ZAB060 | ZAB040 | |
|---|---|---|---|---|---|---|---|---|
| Description | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE | 6 A, SILICON, RECTIFIER DIODE |
| Maker | EDI [Electronic devices inc.] | - | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
| package instruction | O-PALF-W2 | - | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
| Reach Compliance Code | unknow | - | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| application | GENERAL PURPOSE | - | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ISOLATED | - | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | - | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1 V | - | 1 V | 1 V | 1 V | 1 V | 1 V | 1 V |
| JESD-30 code | O-PALF-W2 | - | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 | O-PALF-W2 |
| Maximum non-repetitive peak forward current | 1000 A | - | 1000 A | 1000 A | 1000 A | 1000 A | 1000 A | 1000 A |
| Number of components | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | - | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | - | 2 | 2 | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Maximum output current | 6 A | - | 6 A | 6 A | 6 A | 6 A | 6 A | 6 A |
| Package body material | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | - | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | - | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 50 V | - | 100 V | 200 V | 1000 V | 800 V | 600 V | 400 V |
| surface mount | NO | - | NO | NO | NO | NO | NO | NO |
| technology | AVALANCHE | - | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal form | WIRE | - | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | - | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |