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PG15GSUSC

Description
350 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size322KB,2 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

PG15GSUSC Overview

350 W, UNIDIRECTIONAL, SILICON, TVS DIODE

PG15GSUSC Parametric

Parameter NameAttribute value
MakerKEC
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage16.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-G2
Maximum non-repetitive peak reverse power dissipation350 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
surface mountYES
technologyAVALANCHE
Terminal formGULL WING
Terminal locationDUAL
SEMICONDUCTOR
TECHNICAL DATA
Protection in Portable Electronics Applications.
B
PG15GSUSC
Single Line TVS Diode for ESD
Protection in Portable Electronics
G
K
FEATURES
350 Watts peak pulse power (tp=8/20 s)
Transient protection for data lines to
IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact)
IEC 61000-4-4(EFT) 40A(tp=5/50ns)
IEC 61000-4-5(Lightning) 15A(tp=8/20 s)
Small package for use in portable electronics.
Suitable replacement for Multi-Layer Varistors in ESD protection applications.
Protects on I/O or power line.
Low clamping voltage.
Low leakage current.
M
E
A
H
F
2
D
J
C
I
DIM
A
B
C
M
D
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_ 0.05
1.25 +
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
1. ANODE
2. CATHODE
APPLICATIONS
Cell phone handsets and accessories.
Microprocessor based equipment.
Personal digital assistants (PDA s)
Notebooks, desktops, & servers.
Portable instrumentation.
Pagers peripherals.
USC
Marking
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Peak Pulse Power (tp=8/20 s)
Peak Pulse Current (tp=8/20 s)
Operating Temperature
Storage Temperature
)
Type Name
SYMBOL
P
PK
I
PP
T
j
T
stg
RATING
350
12
-55 150
-55 150
UNIT
W
A
2
1
SD
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Junction Capacitance
SYMBOL
V
RWM
V
BR
I
R
V
C
C
J
I
t
=1mA
V
RWM
=15V
I
PP
=12A, tp=8/20 s
V
R
=0V, f=1MHz
TEST CONDITION
-
MIN.
-
16.7
-
-
-
TYP.
-
-
-
-
-
MAX.
15
-
1
29
150
UNIT
V
V
A
V
pF
2007. 9. 10
Revision No : 1
L
1
1/2
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