MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
A
B
H
H
E
J
Q
S - DIA.
(4 TYP.)
C2E1
E2
C1
N
123 4 5
C
D
123 45
P
J
N SIDE
1. VN1
2. SNR
3. CN1
4. VNC
5. FNO
P SIDE
1. VP1
2. SPR
3. CP1
4. VPC
5. FPO
N - DIA.
(4 TYP.)
P - M6 THD.
(3 TYP.)
K
R (8 TYP.)
T
0.64 MM SQ. PIN
(10 TYP.)
L
K
F G
M
VP1
C1
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free-wheel
diode power devices.
Features:
Complete Output Power
Circuit
Gate Drive Circuit
VCC
FPO
SPR
CP1
VPC
FO
TEMP
OUT1
SR
IN
GND
OUT2
SENS
SINK
VN1
C2E1
VCC
FNO
SNR
CN1
VNC
FO
TEMP
OUT1
SR
IN
GND
OUT2
SENS
SINK
Protection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
E2
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
5.12
4.33±0.010
2.76
2.05±0.010
1.18
Millimeters
130.0
110.0±0.25
70.0
52.0±0.25
30.0
Dimensions
K
L
M
N
P
Q
R
S
T
Inches
0.55
0.51
0.28
0.26 Dia.
M6 Metric
0.14
0.100
0.08 Dia.
0.016
Millimeters
14.0
13.0
7.0
Dia. 6.5
M6
3.5
2.54
Dia. 2.0
0.42
Applications:
Inverters
UPS
Motion/Servo Control
Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM200DSA120 is a 1200V,
200 Ampere Intelligent Power Mod-
ule.
Type
PM
Current Rating
Amperes
200
V
CES
Volts (x 10)
120
1.14 +0.04/-0.02 29.0 +1/-0.5
1.02
0.98
0.71
26.0
25.0
18.0
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Symbol
Power Device Junction Temperature
Storage Temperature
Case Operating Temperature
Mounting Torque, M6 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Module Weight (Typical)
Supply Voltage Protected by OC and SC (V
D
= 13.5 - 16.5V, Inverter Part)
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
T
j
T
stg
T
C
—
—
—
V
CC(prot.)
V
iso
Ratings
-20 to 150
-40 to 125
-20 to 100
3.92~5.88
3.92~5.88
630
800
2500
Units
°C
°C
°C
N·m
N·m
Grams
Volts
Vrms
Control Sector
Supply Voltage (Applied between V
P1
-V
PC
, V
N1
-V
NC
)
Input Voltage (Applied between C
P1
-V
PC
, C
N1
-V
NC
)
Fault Output Supply Voltage (Applied between F
po
-V
pc
and F
no
-V
nc
)
Fault Output Current (Sink Current at F
PO
, F
NO
Terminal)
V
D
V
CIN
V
FO
I
FO
20
10
20
20
Volts
Volts
Volts
mA
IGBT Inverter Sector
Collector-Emitter Voltage (V
D
= 15V, V
CIN
= 5V)
Collector Current, (T
c
= 25°C)
Peak Collector Current, (T
c
= 25°C)
Supply Voltage (Applied between C1 - E2)
Supply Voltage, Surge (Applied between C1 - E2)
Collector Dissipation
V
CES
I
C
I
CP
V
CC
V
CC(surge)
P
C
1200
200
400
900
1000
1140
Volts
Amperes
Amperes
Volts
Volts
Watts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Control Sector
Over Current Trip Level Inverter Part
Short Circuit Trip Level Inverter Part
Over Current Delay Time
Over Temperature Protection
OC
SC
t
off(OC)
OT
OT
r
Supply Circuit Under Voltage Protection
UV
UV
r
Supply Voltage
Circuit Current
V
D
I
D
V
th(on)
V
th(off)
f
PWM
I
FO(H)
I
FO(L)
Minimum Fault Output Pulse Width
SXR Terminal Output Voltage
t
FO
V
SXR
-20°C
≤
T
≤
125°C, V
D
= 15V
-20°C
≤
T
≤
125°C, V
D
= 15V
V
D
= 15V
Trip Level
Reset Level
Trip Level
Reset Level
Applied between V
P1
-V
PC
, V
N1
-V
NC
V
D
= 15V, V
CIN
= 5V, V
N1
-V
NC
V
D
= 15V, V
CIN
= 5V, V
XP1
-V
XPC
Input ON Threshold Voltage
Input OFF Threshold Voltage
PWM Input Frequency
Fault Output Current
Applied between
C
P1
-V
PC
, C
N1
-V
NC
3-φ Sinusoidal
V
D
= 15V, V
FO
= 15V
V
D
= 15V, V
FO
= 15V
V
D
= 15V
T
j
≤125°C,
Rin = 6.8 kΩ (S
PR
, S
NR
)
240
320
—
100
85
11.5
—
13.5
—
—
1.2
1.7
—
—
—
1.0
4.5
360
540
5
110
95
12.0
12.5
15
23
23
1.5
2.0
15
—
10
1.8
5.1
—
—
—
120
105
12.5
—
16.5
30
30
1.8
2.3
20
0.01
15
—
5.6
Amperes
Amperes
µs
°C
°C
Volts
Volts
Volts
mA
mA
Volts
Volts
kHz
mA
mA
ms
Volts
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Collector Cutoff Current
I
CES
V
EC
V
CE(sat)
V
CE
= V
CES
, T
j
= 25°C
V
CE
= V
CES
, T
j
= 125°C
Emitter-Collector Voltage
Collector-Emitter Saturation Voltage
-I
C
= 200A, V
D
= 15V, V
CIN
= 5V
V
D
= 15V, V
CIN
= 0V, I
C
= 200A
V
D
= 15V, V
CIN
= 0V, I
C
= 200A,
T
j
= 125°C
Inductive Load Switching Times
t
on
t
rr
t
C(on)
t
off
t
C(off)
V
D
= 15V, V
CIN
= 0
↔
5V
V
CC
= 600V, I
C
= 200A
T
j
= 125°C
0.5
—
—
—
—
1.4
0.2
0.4
2.0
0.6
2.5
0.4
1.0
3.5
1.1
µs
µs
µs
µs
µs
—
—
—
—
—
—
—
2.5
2.3
2.1
1
10
3.5
3.2
2.9
mA
mA
Volts
Volts
Volts
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
Symbol
R
th(j-c)Q
R
th(j-c)F
Contact Thermal Resistance
R
th(c-f)
Condition
Each IGBT
Each FWDi
Case to Fin Per Module,
Thermal Grease Applied
Min.
—
—
—
Typ.
—
—
—
Max.
0.11
0.18
0.038
Units
°C/Watt
°C/Watt
°C/Watt
Recommended Conditions for Use
Characteristic
Supply Voltage
Symbol
V
CC
V
D
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Minimum Dead Time
V
CIN(on)
V
CIN(off)
f
PWM
t
dead
Condition
Applied across C1-E2 Terminals
Applied between V
P1
-V
PC
, V
N1
-V
NC
Applied between
C
P1
-V
PC
, C
N1
-V
NC
Using Application Circuit
Input Signal
Value
0 ~ 800
15
±
1.5
0 ~ 0.8
Units
Volts
Volts
Volts
4.0 ~ V
SXR
Volts
5 ~ 20
≥
3.5
kHz
µs
Sep.2000
MITSUBISHI INTELLIGENT POWER MODULES
PM200DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
6
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
, (VOLTS)
SATURATION VOLTAGE V
CE(sat)
, (VOLTS)
5
COLLECTOR CURRENT, I
C
, (AMPERES)
360
V
D
= 15V
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
15
5
4
3
2
1
0
0
I
C
= 200A
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
4
280
V
D
= 17V
13
3
200
2
120
1
T
j
= 25
o
C
V
CIN
= 0V
0
12
14
16
18
20
22
0
80
160
240
320
SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10
1
10
1
V
CC
= 600V
V
D
= 15V
SWITCHING TIMES, t
c(on)
, t
c(off)
, (µs)
10
0
10
3
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
Inductive Load
t
off
t
on
T
j
= 25
o
C
T
j
= 125
o
C
REVERSE RECOVERY TIME, t
rr
, (µs)
t
rr
10
0
V
CC
= 600V
V
D
= 15V
Inductive Load
10
0
t
c(off)
t
c(on)
10
-1
I
rr
V
CC
= 600V
V
D
= 15V
Inductive Load
10
2
T
j
= 25
o
C
T
j
= 125
o
C
T
j
= 25
o
C
T
j
= 125
o
C
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
-1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
-2
10
1
10
1
10
2
10
3
COLLECTOR REVERSE CURRENT, I
E
, (AMPERES)
DIODE FORWARD CHARACTERISTICS
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
10
3
OVER CURRENT TRIP LEVEL % (NORMALIZED)
120
OVER CURRENT TRIP LEVEL % (NORMALIZED)
140
T
C
= 25
o
C
V
D
= 15V
V
CIN
= 5V
T
j
= 25
o
C
T
j
= 125
o
C
100
120
10
2
80
100
60
80
10
1
40
60
V
D
= 15V
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
0
0
13
15
17
19
21
SUPPLY VOLTAGE, V
D
, (VOLTS)
0
0
40
80
120
160
JUNCTION TEMPERATURE, T
C
, (
o
C)
Sep.2000
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