EEWORLDEEWORLDEEWORLD

Part Number

Search

SB20015M

Description
2 A, 15 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size34KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

SB20015M Overview

2 A, 15 V, SILICON, RECTIFIER DIODE

SB20015M Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F3
Maximum non-repetitive peak forward current10 A
Number of components1
Phase1
Number of terminals3
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage15 V
Maximum reverse recovery time0.01 µs
surface mountYES
technologySCHOTTKY
Terminal formFLAT
Terminal locationDUAL
Ordering number : ENA0198
SB20015M
SANYO Semiconductors
DATA SHEET
SB20015M
Applications
Low IR Schottky Barrier Diode
15V, 2.0A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Mounted on a ceramic board (500mm
!0.8mm)
2
Conditions
Ratings
15
17
2.0
10
--55 to +125
--55 to +125
Unit
V
V
A
A
°C
°C
50Hz sine wave, 1 cycle
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
C
trr
Rth(j-a)
IR=0.2mA
IF=2.0A
VR=7.5V
VR=10V, f=1MHz
IF=IR=100mA, See specified Test Circuit.
Mounted on a ceramic board (500mm
2
!0.8mm)
Conditions
Ratings
min
15
0.55
6
27
10
70
typ
max
Unit
V
V
µA
pF
ns
°C
/ W
Marking : SN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72606 / 32406SB MS IM TB-00002129 No. A0198-1/3

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2132  727  1685  1150  1345  43  15  34  24  28 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号