MBRF735 - MBRF7150
Isolated 7.5 AMPS. Schottky Barrier Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.124(3.16)
.118(3.00)
.406(10.3)
.390(9.90)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.112(2.85)
.100(2.55)
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
o
C/10 seconds,0.25”(6.35mm)from case
.606(15.5)
.583(14.8)
.063(1.6)
MAX
.161(4.1)
.146(3.7)
.110(2.8)
.098(2.5)
.030(0.76)
.020(0.50)
.055(1.4)
.043(1.1)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
.100(2.55)
.100(2.55)
PIN 1
Mechanical Data
Cases: ITO-220AC molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol
MBRF MBRF MBRF MBRF MBRF MBRF MBRF
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Repetitive Forward Current (Square Wave, 20KHz) at
o
Tc=105 C
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load (JEDEC method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at (Note 2)
o
I
F
=7.5A,Tc=25 C
o
I
F
=7.5A,Tc=125 C
o
I
F
=15A,Tc=25 C
o
I
F
=15A,Tc=125 C
Maximum Instantaneous Reverse Current @ Tc =25 C
o
at Rated DC Blocking Voltage (Note 1) @ Tc=125 C
Voltage Rate of Change (Rated V
R
)
Typical Junction Capacitance
Maximum Thermal Resistance, (Note 3)
Operating Junction Temperature Range
Storage Temperature Range
Notes:
o
V
RRM
V
RMS
V
DC
I
(AV)
I
FRM
I
FSM
I
RRM
V
F
I
R
dV/dt
Cj
735
35
24
35
745
45
31
45
750
50
35
50
760
60
42
60
7.5
790
90
63
90
7100
100
70
100
7150
150
105
150
V
V
V
A
A
A
15.0
150
1.0
－
0.57
0.84
0.72
0.75
0.65
－
－
0.5
0.92
0.82
-
-
1.02
0.92
-
-
A
V
mA
mA
V/uS
200
pF
o
0.1
15
350
0.1
10
10,000
280
7.0
-65 to +150
-65 to +175
0.1
5.0
R
θJC
T
J
T
STG
C/W
o
C
o
C
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-plate.
- 94 -
Version: B07
RATINGS AND CHARACTERISTIC CURVES (MBRF735 THRU MBRF7150)
FIG.1- FORWARD CURRENT DERATING CURVE
10
175
RESISTIVE OR
INDUCTIVE LOAD
8
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
Tj=Tj max.
8.3ms Single Half Sine Wave
JEDEC Method
AVERAGE FORWARD CURRENT. (A)
150
125
100
6
4
75
2
MBRF735-MBRF745
MBRF750-MBRF7150
0
0
50
100
o
CASE TEMPERATURE. ( C)
150
50
25
1
10
NUMBER OF CYCLES AT 60Hz
100
40
FIG.3- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
Pulse Width=300 s
1% Duty Cycle
FIG.4- TYPICAL REVERSE CHARACTERISTICS
MBRF735-MBRF745
MBRF750-MBRF7150
10
Tj=125
0
C
10
INSTANTANEOUS FORWARD CURRENT. (A)
MB
RF
INSTANTANEOUS REVERSE CURRENT. (mA)
5
71
0
Tj=125
0
C
1
790
RF
-71
Tj=25
0
C
1
00
MB
0.1
Tj=75
0
C
0.1
0.01
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150
0.01
0
0.1 0.2 0.3
0.4
0.5
0.6 0.7 0.8 0.9 1.0 1.1 1.2
FORWARD VOLTAGE. (V)
0.001
0
Tj=25
0
C
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL JUNCTION CAPACITANCE
4,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
100
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
1,000
TRANSIENT THERMAL IMPEDANCE. (
O
C/W)
100
JUNCTION CAPACITANCE.(pF)
10
1
100
MBRF735-MBRF745
MBRF750-MBRF760
MBRF790-MBRF7150
0.1
1.0
10
REVERSE VOLTAGE. (V)
40
0.1
0.01
0.1
1
T, PULSE DURATION. (sec)
10
100
Version: B07
MCU
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