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ES1A_1

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size122KB,2 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
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ES1A_1 Overview

1 A, 50 V, SILICON, SIGNAL DIODE

ES1A_1 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0200 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
ES1A - ES1J
1.0 AMP. Surface Mount Super Fast Rectifiers
SMA/DO-214AC
Features
Glass passivated junction chip
For surface mounted application
Low profile package
Built-in strain relief,
Ideal for automated placement
Easy pick and place
Super fast recovery time for high efficiency
Glass passivated chip junction
High temperature soldering:
260
O
C/10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Mechanical Data
Cases: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packing: 12mm tape per EIA STD RS-481
Weight: 0.064 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
O
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Symbol ES ES ES ES ES ES ES ES
Units
Type Number
1A 1B 1C 1D 1F 1G 1H 1J
Maximum Recurrent Peak Reverse Voltage
V
V
RRM
50 100 150 200 300 400 500 600
Maximum RMS Voltage
V
V
RMS
35 70 105 140 210 280 350 420
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.0A
Maximum DC Reverse Current @ T
A
=25
o
C
at Rated DC Blocking Voltage @ T
A
=100
o
C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
V
DC
I
(AV)
I
FSM
V
F
I
R
50
100 150 200 300 400 500 600
1.0
30
0.95
5.0
100
35
10
85
35
-55 to +150
-55 to +150
8
o
V
A
A
1.3
1.7
V
uA
uA
nS
pF
Trr
Cj
R
θJA
R
θJL
T
J
C
/W
o
o
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied V
R
=4.0 Volts
3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area.
C
C
- 178 -
Version: B07

ES1A_1 Related Products

ES1A_1 ES1A ES1C
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC
Number of terminals 2 2 2
Number of components 1 1 1
surface mount Yes YES YES
Terminal form C BEND C BEND C BEND
Terminal location pair DUAL DUAL
Diode component materials silicon SILICON SILICON
Diode type Signal diode RECTIFIER DIODE RECTIFIER DIODE
Maximum reverse recovery time 0.0200 us 0.035 µs 0.035 µs
Maximum repetitive peak reverse voltage 50 V 50 V 150 V
Is it Rohs certified? - conform to conform to
package instruction - GREEN, PLASTIC, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN
Reach Compliance Code - compliant compli
ECCN code - EAR99 EAR99
Other features - UL RECOGNIZED UL RECOGNIZED
Configuration - SINGLE SINGLE
Maximum forward voltage (VF) - 0.95 V 0.95 V
JEDEC-95 code - DO-214AC DO-214AC
JESD-30 code - R-PDSO-C2 R-PDSO-C2
Humidity sensitivity level - 1 1
Maximum non-repetitive peak forward current - 30 A 30 A
Maximum operating temperature - 150 °C 150 °C
Minimum operating temperature - -55 °C -55 °C
Maximum output current - 1 A 1 A
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Certification status - Not Qualified Not Qualified
Terminal surface - Pure Tin (Sn) Pure Tin (Sn)
Base Number Matches - 1 1

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