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3N171(TO-72)

Description
Transistor
CategoryThe transistor   
File Size272KB,1 Pages
ManufacturerMicross
Websitehttps://www.micross.com
Download Datasheet Parametric View All

3N171(TO-72) Overview

Transistor

3N171(TO-72) Parametric

Parameter NameAttribute value
MakerMicross
package instruction,
Reach Compliance Codecompliant
Base Number Matches1
3N171
N-CHANNEL MOSFET
The 3N171 is an enhancement mode N-Channel Mosfet
The 3N171 is an enhancement mode N-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
(See Packaging Information).
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL 3N171 
LOW DRAIN TO SOURCE RESISTANCE 
FAST SWITCHING 
ABSOLUTE MAXIMUM RATINGS (Note 1) 
@ 25°C (unless otherwise noted) 
r
DS(on) 
≤ 200Ω 
t
d(on) 
≤ 3.0ns 
Maximum Temperatures 
Storage Temperature 
Operating Junction Temperature 
3N171 Features:
Maximum Power Dissipation 
Continuous Power Dissipation  
Low ON Resistance
MAXIMUM CURRENT
Low Capacitance
Drain to Source  
High Gain
MAXIMUM VOLTAGES 
High Gate Breakdown Voltage
Drain to Gate 
Low Threshold Voltage
Drain to Source 
Peak Gate to Source  
 
3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN 
TYP. 
MAX 
UNITS 
BV
DSS
 
Drain to Source Breakdown Voltage 
25 
‐‐ 
‐‐ 
 
V
DS(on)
 
Drain to Source “On” Voltage 
‐‐ 
‐‐ 
2.0 
V
GS(th)
 
Gate to Source Threshold Voltage 
1.5 
‐‐ 
2.0 
I
GSS
 
Gate Leakage Current 
‐‐ 
‐‐ 
10 
pA 
I
DSS
 
Drain Leakage Current “Off” 
‐‐ 
‐‐ 
10 
nA 
I
D(on)
 
Drain Current “On” 
10 
‐‐ 
‐‐ 
mA 
g
fs
 
Forward Transconductance 
1000 
‐‐ 
‐‐ 
µS 
r
DS(on)
 
Drain to Source “On” Resistance 
‐‐ 
‐‐ 
200 
Ω 
‐65°C to +150°C 
‐55°C to +135°C 
300mW 
30mA 
±35V 
25V 
±35V 
 
CONDITIONS 
I
= 10µA,   V
GS
 = 0V 
                   I
= 10mA,   V
GS
 = 10V 
V
DS
 = 10V,    I
= 10µA 
V
GS 
= ‐35V,   V
DS
 = 0V 
V
GS
 = 10V,   V
DS
 = 10V 
V
GS 
= 10V,  V
DS
 = 10V 
V
DS
 = 10V,    I
= 2mA ,   f = 1kHz 
V
GS 
= 10V,   I
= 0A,   f = 1kHz 
C
rss
 
Reverse Transfer Capacitance 
‐‐ 
‐‐ 
1.3 
 
V
DS
 = 0V,     V
GS
 = 0V ,   f = 1MHz 
pF 
C
iss
 
Input Capacitance 
‐‐ 
‐‐ 
V
DS
 = 10V,     V
GS
 = 0V ,   f = 1MHz 
C
db
 
Drain to Body Capacitance 
‐‐ 
‐‐ 
5.0 
V
DB 
= 10V,   f = 1MHz 
 
 
 
 
 
 
 
SWITCHING CHARACTERISTICS                                                                                                                                      
SYMBOL 
CHARACTERISTIC 
MAX 
UNITS 
CONDITIONS 
t
d(on)
 
Turn On Delay Time 
 
 
ns 
V
DD 
= 10V,  I
D(on) 
= 10mA, V
GS(on) 
= 10V, V
GS(off) 
= 0V, R
= 50Ω 
t
r
 
Turn On Rise Time 
10 
t
d(off)
 
Turn Off Delay Time 
t
f
 
Turn Off Fall Time 
15 
Click To Buy
Available Packages:
3N171 in TO-72
3N171 in bare die.
TO-72 (Bottom View)
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N171 serviceability may be impaired. 
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email:
chipcomponents@micross.com
Web:
www.micross.com/distribution.aspx
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