SF11_1 datasheet, PDF - EEWORLD Datasheet

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SF11_1: Description1 A, 50 V, SILICON, SIGNAL DIODE, DO-41; Categorysemiconductor Discrete semiconductor; File Size179KB，2 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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SF11_1 Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-41

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SF11 - SF18

1.0 AMP. Super Fast Rectifiers

DO-41

Features

High efficiency, low VF

High current capability

High reliability

High surge current capability

Low power loss.

For use in low voltage, high frequency inventor, free

wheeling, and polarity protection application

Mechanical Data

Cases: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: Pure tin plated, lead free., solderable per

MIL-STD-202, Method 208 guaranteed

Polarity: Color band denotes cathode

High temperature soldering guaranteed:

260

C/10 seconds/.375”,(9.5mm) lead

lengths at 5 lbs., (2.3kg) tension

Weight: 0.34 gram

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol

SF SF SF SF

Type Number

11 12 13 14

Maximum Recurrent Peak Reverse Voltage

RRM

50 100 150 200

Maximum RMS Voltage

RMS

35 70 105 140

Maximum DC Blocking Voltage

50 100 150 200

Maximum Average Forward Rectified

Current .375 (9.5mm) Lead Length

= 55

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated

Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@ 1.0A

Maximum DC Reverse Current @ T

=25 C

at Rated DC Blocking Voltage @ T

=100 C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance

Operating Temperature Range

Storage Temperature Range

Notes:

300

210

300

400

280

400

500

350

500

Units

600

420

600

(AV)

FSM

Trr

θJA

1.0

0.95

5.0

100

-65 to +125

-65 to +150

1.3

1.7

C/W

STG

1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

3. Mount on Cu-Pad Size 5mm x 5mm on PCB.

Version: A06

SF11_1 Related Products

	SF11_1	SF13	SF15
Description	1 A, 50 V, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41	1 A, SILICON, SIGNAL DIODE, DO-41
Is it Rohs certified?	-	conform to	conform to
Maker	-	Taiwan Semiconductor	Taiwan Semiconductor
package instruction	-	O-PALF-W2	O-PALF-W2
Reach Compliance Code	-	compli	compli
ECCN code	-	EAR99	EAR99
Other features	-	HIGH RELIABILITY, LOW POWER LOSS, FREE WHEELING DIODE	HIGH RELIABILITY, LOW POWER LOSS, FREE WHEELING DIODE
Shell connection	-	ISOLATED	ISOLATED
Configuration	-	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	0.95 V	1.3 V
JEDEC-95 code	-	DO-41	DO-41
JESD-30 code	-	O-PALF-W2	O-PALF-W2
Humidity sensitivity level	-	1	1
Maximum non-repetitive peak forward current	-	30 A	30 A
Number of components	-	1	1
Number of terminals	-	2	2
Maximum operating temperature	-	125 °C	125 °C
Minimum operating temperature	-	-65 °C	-65 °C
Maximum output current	-	1 A	1 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	ROUND	ROUND
Package form	-	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	-	150 V	300 V
Maximum reverse recovery time	-	0.035 µs	0.035 µs
surface mount	-	NO	NO
Terminal form	-	WIRE	WIRE
Terminal location	-	AXIAL	AXIAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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