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IDT70V26S55JG

Description
Dual-Port SRAM, 16KX16, 55ns, CMOS, PQCC84, PLASTIC, LCC-84
Categorystorage   
File Size158KB,17 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance  
Download Datasheet Parametric View All

IDT70V26S55JG Overview

Dual-Port SRAM, 16KX16, 55ns, CMOS, PQCC84, PLASTIC, LCC-84

IDT70V26S55JG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeLCC
package instructionQCCJ, LDCC84,1.2SQ
Contacts84
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time55 ns
Other featuresSEMAPHORE; AUTOMATIC POWER-DOWN
I/O typeCOMMON
JESD-30 codeS-PQCC-J84
JESD-609 codee3
length29.3116 mm
memory density262144 bit
Memory IC TypeDUAL-PORT SRAM
memory width16
Number of functions1
Number of ports2
Number of terminals84
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16KX16
Output characteristics3-STATE
ExportableYES
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC84,1.2SQ
Package shapeSQUARE
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Maximum seat height4.57 mm
Maximum standby current0.006 A
Minimum standby current3 V
Maximum slew rate0.14 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMATTE TIN
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width29.3116 mm
Base Number Matches1
HIGH-SPEED 3.3V
16K x 16 DUAL-PORT
STATIC RAM
IDT70V26S/L
Features
True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Commercial: 25/35/55ns (max.)
– Industrial: 25ns (max.)
Low-power operation
– IDT70V26S
Active: 300mW (typ.)
Standby: 3.3mW (typ.)
– IDT70V26L
Active: 300mW (typ.)
Standby: 660
µ
W (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT70V26 easily expands data bus width to 32 bits or more
using the Master/Slave select when cascading more than
one device
M/S = V
IH
for
BUSY
output flag on Master
M/S = V
IL
for
BUSY
input on Slave
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
TTL-compatible, single 3.3V (±0.3V) power supply
Available in 84-pin PGA and PLCC
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Functional Block Diagram
R/W
L
UB
L
R/W
R
UB
R
LB
L
CE
L
OE
L
LB
R
CE
R
OE
R
I/O
8L
-I/O
15L
I/O
Control
I/O
0L
-I/O
7L
BUSY
L
A
13L
A
0L
(1,2)
I/O
8R
-I/O
15R
I/O
Control
I/O
0R
-I/O
7R
BUSY
R
Address
Decoder
14
(1,2)
MEMORY
ARRAY
14
Address
Decoder
A
13R
A
0R
CE
L
ARBITRATION
SEMAPHORE
LOGIC
CE
R
SEM
L
M/S
NOTES:
1. (MASTER):
BUSY
is output; (SLAVE):
BUSY
is input.
2.
BUSY
outputs are non-tri-stated push-pull.
SEM
R
2945 drw 01
JULY 2003
1
©2003 Integrated Device Technology, Inc.
DSC 2945/14
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