2N6027, 2N6028
Preferred Device
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
Designed to enable the engineer to “program’’ unijunction
characteristics such as RBB,
η,
IV, and IP by merely selecting two
resistor values. Application includes thyristor–trigger, oscillator, pulse
and timing circuits. These devices may also be used in special thyristor
applications due to the availability of an anode gate. Supplied in an
inexpensive TO–92 plastic package for high–volume requirements,
this package is readily adaptable for use in automatic insertion
equipment.
•
Programmable — RBB,
η,
IV and IP
•
Low On–State Voltage — 1.5 Volts Maximum @ IF = 50 mA
•
Low Gate to Anode Leakage Current — 10 nA Maximum
•
High Peak Output Voltage — 11 Volts Typical
•
Low Offset Voltage — 0.35 Volt Typical (RG = 10 k ohms)
•
Device Marking: Logo, Device Type, e.g., 2N6027, Date Code
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
*Power Dissipation
Derate Above 25°C
*DC Forward Anode Current
Derate Above 25°C
*DC Gate Current
Repetitive Peak Forward Current
100
µ
s Pulse Width, 1% Duty Cycle
*20
µ
s Pulse Width, 1% Duty Cycle
Non–Repetitive Peak Forward Current
10
µ
s Pulse Width
*Gate to Cathode Forward Voltage
*Gate to Cathode Reverse Voltage
*Gate to Anode Reverse Voltage
*Anode to Cathode Voltage(1)
Operating Junction Temperature Range
*Storage Temperature Range
*Indicates JEDEC Registered Data
(1) Anode positive, RGA = 1000 ohms
Anode negative, RGA = open
Symbol
PF
1/θJA
IT
IG
ITRM
1.0
2.0
ITSM
VGKF
VGKR
VGAR
VAK
TJ
Tstg
5.0
40
Amps
Volts
Volts
Volts
Volts
°C
°C
Value
300
4.0
150
2.67
Unit
mW
mW/°C
mA
mA/°C
mA
Amps
1
2
3
1
2
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PUTs
40 VOLTS
300 mW
G
A
K
3
"
50
TO–92 (TO–226AA)
CASE 029
STYLE 16
PIN ASSIGNMENT
Anode
Gate
Cathode
*
5.0
"
40
–50 to
+100
–55 to
+150
40
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
May, 2000 – Rev. 2
Publication Order Number:
2N6027/D
2N6027, 2N6028
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes
( 1/16″ from case, 10 secs max)
Symbol
R
θJC
R
θJA
TL
Max
75
200
260
Unit
°C/W
°C/W
°C
t
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
*Peak Current
(VS = 10 Vdc, RG = 1 MΩ)
(VS = 10 Vdc, RG = 10 k ohms)
*Offset Voltage
(VS = 10 Vdc, RG = 1 MΩ)
(VS = 10 Vdc, RG = 10 k ohms)
*Valley Current
(VS = 10 Vdc, RG = 1 MΩ)
(VS = 10 Vdc, RG = 10 k ohms)
(VS = 10 Vdc, RG = 200 ohms)
*Gate to Anode Leakage Current
(VS = 40 Vdc, TA = 25°C, Cathode Open)
(VS = 40 Vdc, TA = 75°C, Cathode Open)
Gate to Cathode Leakage Current
(VS = 40 Vdc, Anode to Cathode Shorted)
*Forward Voltage (IF = 50 mA Peak)(1)
*Peak Output Voltage
(VG = 20 Vdc, CC = 0.2
µF)
Pulse Voltage Rise Time
(VB = 20 Vdc, CC = 0.2
µF)
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
≤
300
µsec,
Duty Cycle
≤
2%.
2N6027
2N6028
2N6027
2N6028
1
2N6027
2N6028
(Both Types)
1,4,5
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
—
IGAO
—
—
—
1,6
3,7
3
IGKS
VF
Vo
tr
—
—
6.0
—
1.0
3.0
5.0
0.8
11
40
10
—
50
1.5
—
80
nAdc
Volts
Volt
ns
IV
—
—
70
25
1.5
1.0
18
18
150
150
—
—
50
25
—
—
—
—
VT
0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
µA
Fig. No.
2,9,11
Symbol
IP
—
—
—
—
1.25
0.08
4.0
0.70
2.0
0.15
5.0
1.0
Volts
Min
Typ
Max
Unit
µA
mA
nAdc
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2
2N6027, 2N6028
IA
+VB
A
G
VAK
K
R2
– VS =
R1
R1
V
R1 + R2 B
IA
+
VAK
RG = R1 R2
R1 + R2
RG
VS
VF
VV
1A – Programmable Unijunction
with “Program” Resistors
R1 and R2
1B – Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
IGAO
IP
IV
IF
VA
VS
–VP
VT = VP – VS
IA
IC – Electrical Characteristics
Figure 1. Electrical Characterization
Adjust
for
Turn–on
Threshold
VB
100k
1.0%
–
IP (SENSE)
100
µV
= 1.0 nA
+
2N5270
0.01
µF
R
RG = R/2
VS = VB/2
(See Figure 1)
R
CC
+VB
+V
510k
16k
Vo
6V
vo
20
Ω
27k
0.6 V
tf
t
Scope
20
Put
Under
Test
Figure 2. Peak Current (IP) Test Circuit
Figure 3. Vo and tr Test Circuit
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3
2N6027, 2N6028
TYPICAL VALLEY CURRENT BEHAVIOR
1000
IV, VALLEY CURRENT (
µ
A)
IV, VALLEY CURRENT (
µ
A)
500
RG = 10 kΩ
100
RG = 10 kΩ
100
100 kΩ
100 kΩ
10
1 MΩ
1 MΩ
10
5
10
15
20
5
–50
–25
0
+25
+50
+75
+100
VS, SUPPLY VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
Figure 4. Effect of Supply Voltage
Figure 5. Effect of Temperature
10
V F, PEAK FORWARD VOLTAGE (VOLTS)
Vo, PEAK OUTPUT VOLTAGE (VOLTS)
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
TA = 25°C
25
TA = 25°C
(SEE FIGURE 3)
20
CC = 0.2
µF
15
10
1000 pF
5.0
0
0
5.0
10
15
20
25
30
35
40
IF, PEAK FORWARD CURRENT (AMP)
VS, SUPPLY VOLTAGE (VOLTS)
Figure 6. Forward Voltage
Figure 7. Peak Output Voltage
A
G
E
A
P
N
P
N
K
G
B2
R2
RBB = R1 + R2
R1
η
=
R1 + R2
R1
RT
A
G
R1
K
B1
R2
+
CC
K
Circuit Symbol
Equivalent Circuit
with External “Program”
Resistors R1 and R2
Typical Application
Figure 8. Programmable Unijunction
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4
2N6027, 2N6028
TYPICAL PEAK CURRENT BEHAVIOR
2N6027
10
IP, PEAK CURRENT (
µ
A)
5.0
3.0
2.0
1.0
RG = 10 kΩ
0.5
0.3
0.2
0.1
5.0
100 kΩ
1.0 MΩ
TA = 25°C
(SEE FIGURE 2)
100
50
IP, PEAK CURRENT (
µ
A)
20
10
5.0
2.0
1.0
0.5
0.2
10
15
20
0.1
–50
–25
RG = 10 kΩ
100 kΩ
1.0 MΩ
0
+25
+50
+75
+100
VS = 10 VOLTS
(SEE FIGURE 2)
VS, SUPPLY VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
Figure 9. Effect of Supply Voltage and RG
Figure 10. Effect of Temperature and RG
2N6028
1.0
0.7
0.5
RG = 10 kΩ
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
5.0
100 kΩ
10
5.0
IP, PEAK CURRENT (
µ
A)
2.0
1.0
0.5
0.2
0.1
0.05
0.02
10
15
20
0.01
–50
–25
100 kΩ
1.0 MΩ
0
+25
+50
+75
+100
RG = 10 kΩ
VS = 10 VOLTS
(SEE FIGURE 2)
IP, PEAK CURRENT (
µ
A)
1.0 MΩ
TA = 25°C
(SEE FIGURE 2)
VS, SUPPLY VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
Figure 11. Effect of Supply Voltage and RG
Figure 12. Effect of Temperature and RG
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