Power F-MOS FETs
2SK1611
Silicon N-Channel Power F-MOS FET
s
Features
q
High avalanche energy capacity
q
V
GSS
: 30V guaranteed
q
Low R
DS(on)
, high-speed switching characteristic
unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
4.2±0.2
s
Applications
16.7±0.3
7.5±0.2
q
High-speed switching (switching power supply, AC adaptor)
q
For high-frequency power amplification
φ3.1±0.1
s
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
DC
Pulse
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
800
±30
±3
±6
20
50
2
150
−55
to +150
Unit
V
V
A
A
mJ
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
T
C
= 25°C
Ta = 25°C
1
2
W
°C
°C
1: Gate
2: Drain
3: Source
EIAJ: SC-67
TO-220 Full Pack Package (a)
3
Single pulse
s
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Avalanche energy capacity
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Symbol
I
DSS
I
GSS
V
DSS
EAS
*
V
th
R
DS(on)
| Y
fs
|
C
oss
t
on
t
f
t
d(off)
Conditions
V
DS
= 640V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
L = 4.5mH, I
D
= 3A, V
DD
= 50V
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
DS
= 25V, I
D
= 2A
V
DS
= 20V, V
GS
= 0, f = 1MHz
1.5
800
20
1
3.2
2.4
730
90
40
V
GS
= 10V, I
D
= 2A
V
DD
= 200V, R
L
= 100Ω
40
35
105
5
4
min
typ
max
0.1
±1
Unit
mA
µA
V
mJ
V
Ω
S
pF
pF
pF
ns
ns
ns
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Fall time
Turn-off time (delay time)
*
Avalanche energy capacity test circuit
L
I
D
Gate
V
DS
D
rain
S
ource
C
V
DD
PVS
R
GS
1
Power F-MOS FETs
I
D
V
DS
6
3.2
2SK1611
| Y
fs
|
I
D
Forward transfer admittance |Y
fs
| (S)
R
DS(on)
I
D
V
DS
=25V
T
C
=25˚C
T
C
=25˚C
5
V
GS
=15V 10V
7V
Drain to source ON-resistance R
DS(on)
(
Ω
)
10
T
C
=25˚C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
8
Drain current I
D
(A)
6V
4
6
3
4
2
5V
1
50W
V
GS
=10V
15V
2
4V
0
0
10
20
30
40
50
60
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
Drain current I
D
(A)
I
D
V
GS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
6
V
DS
=25V
T
C
=25V
5
10000
C
iss
, C
oss
, C
rss
V
DS
160
T
C
=25˚C
140
t
on
, t
f
, t
d(off)
I
D
V
DD
=200V
V
GS
=10V
T
C
=25˚C
3000
Switching time t
on
,t
f
,t
d(off)
(ns)
Drain current I
D
(A)
120
t
d(off)
100
80
60
t
on
40
t
f
20
0
4
1000
C
iss
300
3
2
100
C
oss
30
C
rss
10
0
40
80
120
160
200
240
1
0
0
2
4
6
8
10
0
1
2
3
4
5
6
Gate to source voltage V
GS
(V)
Drain to source voltage V
DS
(V)
Drain current I
D
(A)
P
D
Ta
60
Area of safe operation (ASO)
100
30
10
3
1
0.3
0.1
0.03
I
DP
I
D
DC
t=1ms
30
EAS
T
j
Avalanche energy capacity EAS (mJ)
I
D
=3A
V
DD
=50V
25
Allowable power dissipation P
D
(W)
50
(1) T
C
=Ta
(2) Without heat sink
(P
D
=2W)
Non repetitive pulse
T
C
=25˚C
40
(1)
30
Drain current I
D
(A)
20
15
20
10ms
10
10
(2)
0
0
20
40
60
80 100 120 140 160
0.01
1
3
10
30
100
300
1000
5
0
25
50
75
100
125
150
175
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Junction temperature T
j
(˚C)
2
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