AP9973M
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Single Drive Requirement
▼
Surface Mount Package
D1
G2
S2
D1
D2
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
80mΩ
3.9A
SO-8
S1
G1
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=100℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1,2
3
Rating
60
±20
3.9
2.5
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Value
Max.
62.5
Unit
℃/W
Data and specifications subject to change without notice
201029031
AP9973M
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
3.5
-
-
-
8
2
4
8
4
20
6
700
80
50
Max. Units
-
-
80
100
3
-
1
25
±100
13
-
-
-
-
-
-
1120
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS
=10V, I
D
=3.9A
V
GS
=4.5V, I
D
=2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=3.9A
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V
V
GS
= ± 20V
I
D
=3.9A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=3.9A, V
GS
=0V
I
S
=3.9A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
35
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
AP9973M
40
30
35
T
A
=25
o
C
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
6.0V
5.0V
4.5V
25
T
A
=150 C
o
10V
6.0V
5.0V
4.5V
20
25
20
15
15
10
10
5
V
G
=3.0V
5
V
G
=3.0V
0
0
1
2
3
4
5
6
7
8
0
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
95
2.5
I
D
=3.9A
90
I
D
=3.9A
2.0
T
A
=25
o
C
Normalized R
DS(ON)
V
G
=10V
85
R
DS(ON)
(m
Ω
)
1.5
80
1.0
75
0.5
70
3
5
7
9
11
0.0
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
4
3
2
2
V
GS(th)
(V)
1.4
I
S
(A)
o
T
j
=150 C
T
j
=25
o
C
1.5
1
1
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9973M
14
10000
f=1.0MHz
I
D
=3.9A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
=48V
V
DS
=38V
V
DS
=30V
C (pF)
1000
8
Ciss
6
100
4
Coss
Crss
2
0
0
5
10
15
20
25
30
35
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
10
0.2
0.1
0.1
0.05
I
D
(A)
1
1ms
10ms
0.02
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=135℃/W
℃
0.01
0.01
Single Pulse
0.1
T
A
=25 C
Single Pulse
0.01
0.1
1
10
100
o
100ms
1s
DC
0.001
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
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