EN39SL160L-70TI datasheet, PDF

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EN39SL160L-70TI: DescriptionFlash, 1MX16, 70ns, PDSO48, TSOP-48; Categorystorage storage; File Size573KB，52 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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EN39SL160L-70TI Overview

Flash, 1MX16, 70ns, PDSO48, TSOP-48

EN39SL160L-70TI Parametric

Parameter Name	Attribute value
Maker	ESMT
package instruction	TSSOP,
Reach Compliance Code	unknown
Maximum access time	70 ns
Spare memory width	8
startup block	BOTTOM/TOP
JESD-30 code	R-PDSO-G48
length	18.4 mm
memory density	16777216 bit
Memory IC Type	FLASH
memory width	16
Number of functions	1
Number of terminals	48
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Programming voltage	1.8 V
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
type	NOR TYPE
width	12 mm
Base Number Matches	1

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EN39SL160H/L

16 Megabit (2048K x 8-bit / 1024K x 16-bit) Flash Memory With

4Kbytes Uniform Sector, CMOS 1.8 Volt-only

FEATURES

•

Single power supply operation

- Full voltage range:1.65-1.95 volt for read and

write operations.

- Ideal for battery-powered applications.

•

High performance

- Access times as fast as 70 ns

•

Low power consumption (typical values at 5

MHz)

- 5 mA typical active read current

- 15 mA typical program/erase current

- 0.2

μA

typical standby current

•

Uniform Sector Architecture:

- 512 sectors of 4-Kbyte / 2-Kword

- 32 blocks of 64-Kbyte / 32-Kword

- Any sector or block can be erased individually

•

WP#/ACC Input pin:

- Write protect (WP#) function allows protection

the first or last blocks, regardless of block

protect status

- Acceleration (ACC) function acceleration

program timing.

•

Block protection:

- Hardware locking of blocks to prevent

program or erase operations within individual

blocks

- Additionally, temporary Block Unprotect

allows code changes in previously locked

blocks.

•

High performance program/erase speed

Byte/Word program time: 5µs/7µs typical

Sector erase time: 90ms typical

Block erase time: 400ms typical

Chip erase time: 7 s typical

•

JEDEC Standard Embedded Erase and

Program Algorithms

•

JEDEC standard DATA# polling and toggle

bits feature

•

Single Sector, Block and Chip Erase

•

Block Unprotect Mode

•

Erase Suspend / Resume modes:

Read or program another Sector/Block during

Erase Suspend Mode

•

Low Vcc write inhibit < 1.2V

•

Minimum 100K endurance cycle

•

Package Options

48-pin TSOP (Type 1)

48-ball 6mm x 8mm TFBGA

48-ball 4mm x 6mm WFBGA

•

Industrial temperature Range

GENERAL DESCRIPTION

The EN39SL160H/L is a 16-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 2,097,152 bytes or 1,048,576 words. Any byte can be programmed typically in 5µs.The

EN39SL160H/L features 1.8V voltage read and write operation, with access time as fast as 70ns to

eliminate the need for WAIT statements in high-performance microprocessor systems.

The EN39SL160H/L has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#)

controls, which eliminate bus contention issues. This device is designed to allow either single Sector/Block

or full chip erase operation, where each block can be individually protected against program/erase

operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K

program/erase cycles on each sector or block.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

www.eonssi.com

Rev. E, Issue Date: 2009/07/13

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