BCW61A ... BCW61D
BCW61A ... BCW61D
PNP
Surface Mount General Purpose Si-Epi-Planar Transistors
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage
Power dissipation – Verlustleistung
2.9
±0.1
0.4
3
1.3
±0.1
1.1
PNP
250 mW
SOT-23
(TO-236)
0.01 g
Version 2006-07-31
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Type
Code
1
1.9
2
Dimensions - Maße [mm]
1=B
2=E
3=C
Maximum ratings (T
A
= 25°C)
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom
Peak Base current – Basis-Spitzenstrom
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EB0
P
tot
- I
C
- I
CM
- I
BM
T
j
T
S
2.5 max
Grenzwerte (T
A
= 25°C)
BCW60A ... BCW60D
32 V
32 V
5V
250 mW
1
)
100 mA
200 mA
200 mA
-55...+150°C
-55…+150°C
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
- V
CE
= 5 V, - I
C
= 10 µA
2)
Kennwerte (T
j
= 25°C)
Typ.
140
200
300
460
170
250
350
500
–
–
–
–
Max.
–
–
–
–
220
310
460
630
–
–
–
–
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61B
BCW61C
BCW61D
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
20
30
40
100
120
180
250
380
60
80
100
110
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 1 V, - I
C
= 50 mA
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
BCW61A ... BCW61D
Characteristics (T
j
= 25°C)
Min.
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.25 mA
- I
C
= 50 mA, - I
B
= 1.25 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
- I
C
= 10 mA, - I
B
= 0.25 mA
- I
C
= 50 mA, - I
B
= 1.25 mA
Base-Emitter-voltage – Basis-Emitter-Spannung
2
)
- I
C
= 10 µA, - V
CE
= 5 V
- I
C
= 2 mA, - V
CE
= 5 V
- I
C
= 50 mA, - V
CE
= 1 V
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 30 V, (E open)
- V
CE
= 30 V, T
j
= 125°C, (E open)
Emitter-Base cutoff current
- V
EB
= 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 10 V, I
C
= i
c
= 0, f = 1 MHz
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200 µA, R
G
= 2 kΩ
f = 1 kHz,
Δf
= 200 Hz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Marking - Stempelung
F
R
thA
–
2 dB
< 420 K/W
1
)
BCW60A ... BCW60D
BCW61A = BA
BCW61B = BB
BCW61C = BC
BCW61D = BD
6 dB
C
EBO
–
11 pF
–
C
CBO
–
4.5 pF
–
f
T
100 MHz
250 MHz
–
- I
EB0
–
–
20 nA
- I
CB0
- I
CB0
–
–
–
–
20 nA
20 µA
- V
BE
- V
BE
- V
BE
–
550 mV
–
520 mV
650 mV
780 mV
–
750 mV
–
- V
BEsat
- V
BEsat
–
–
700 mV
830 mV
850 mV
1050 mV
- V
CEsat
- V
CEsat
–
–
120 mV
200 mV
250 mV
550 mV
Kennwerte (T
j
= 25°C)
Typ.
Max.
2
1
Tested with pulses t
p
= 300 µs, duty cycle
≤
2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis
≤
2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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