POWER MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | International Rectifier （ Infineon ） |
| package instruction | IN-LINE, R-PDIP-T3 |
| Contacts | 4 |
| Reach Compliance Code | compli |
| Other features | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE |
| Maximum drain current (Abs) (ID) | 1.3 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PDIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 1.3 W |
| Maximum power dissipation(Abs) | 1.3 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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