PN2907 / PN2907A
PN2907 / PN2907A
PNP
Version 2006-09-12
Power dissipation
Verlustleistung
CBE
Si-Epitaxial Planar Switching Transistors
Si-Epitaxie-Planar-Schalttransistoren
PNP
625 mW
TO-92
(10D3)
0.18 g
16
Plastic case
Kunststoffgehäuse
18
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
2 x 2.54
Dimensions - Maße [mm]
Maximum ratings (T
A
= 25°C)
9
Grenzwerte (T
A
= 25°C)
PN2907
(2N2907)
PN2907A
(2N2907A)
60 V
60 V
5V
625 mW
1
)
600 mA
-55...+150°C
-55…+150°C
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
Collector-Base-voltage – Kollektor-Basis-Spannung
Emitter-Base-voltage – Emitter-Basis-Spannung
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
B open
E open
C open
- V
CEO
- V
CBO
- V
EBO
P
tot
- I
C
T
j
T
S
40 V
Characteristics (T
j
= 25°C)
Min.
DC current gain – Kollektor-Basis-Stromverhältnis
2
)
- I
C
= 0.1 mA, - V
CE
= 10 V
- I
C
= 1 mA, - V
CE
= 10 V
- I
C
= 10 mA, - V
CE
= 10 V
- I
C
= 500 mA, - V
CE
= 10 V
- I
C
= 150 mA, - V
CE
= 10 V
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
PN2907
PN2907A
PN2907
PN2907A
PN2907
PN2907A
PN2907
PN2907A
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
- V
CEsat
- V
CEsat
35
75
50
100
75
100
30
50
100
–
–
Kennwerte (T
j
= 25°C)
Typ.
–
–
–
–
–
–
–
–
–
–
–
Max.
–
–
–
–
–
–
–
–
300
0.4 V
1.6 V
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung
2
)
1
2
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
http://www.diotec.com/
© Diotec Semiconductor AG
1
PN2907 / PN2907A
Characteristics (T
j
= 25°C)
Min.
Base-Emitter saturation voltage – Basis-Sättigungsspannung
2
)
- I
C
= 150 mA, - I
B
= 15 mA
- I
C
= 500 mA, - I
B
= 50 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
- V
CB
= 50 V, (E open)
- V
CB
= 50 V, T
j
= 125°C, (E open)
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 20 V, - I
C
= 50 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- V
EB
= 2 V, I
C
= i
c
= 0, f = 1 MHz
Switching times – Schaltzeiten (between 10% and 90% levels)
turn on
delay time
rise time
turn off
storage time
fall time
- V
CC
= 30 V, - V
BE
= 1.5 V
- I
C
= 150 mA, - I
B1
= 15mA
t
on
t
d
t
r
t
off
t
s
t
f
R
thA
–
–
–
–
–
–
–
–
–
–
–
–
< 200 K/W
1
)
PN2222 / PN2222A
45 ns
10 ns
40 ns
100 ns
80 ns
30 ns
C
EBO
–
–
30 pf
C
CBO
–
–
8 pF
f
T
200 MHz
–
–
PN2907
PN2907A
PN2907
PN2907A
- I
CBO
- I
CBO
- I
CBO
- I
CBO
–
–
–
–
–
–
–
–
20 nA
10 nA
20 µA
10 µA
- V
BEsat
- V
BEsat
–
–
–
–
1.3 V
2.6 V
Kennwerte (T
j
= 25°C)
Typ.
Max.
- V
CC
= 30 V, - I
C
= 150 mA,
- I
B1
= - I
B2
= 15 mA
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
2
1
Tested with pulses t
p
= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t
p
= 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
2
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