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SKM150GB123D

Description
IGBT Modules
CategoryDiscrete semiconductor    The transistor   
File Size603KB,6 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance
Download Datasheet Parametric Compare View All

SKM150GB123D Overview

IGBT Modules

SKM150GB123D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
Parts packaging codeDO-204
package instructionFLANGE MOUNT, R-XUFM-X7
Contacts2
Manufacturer packaging codeCASE D 56
Reach Compliance Codecompli
Other featuresUL RECOGNIZED
Shell connectionISOLATED
Maximum collector current (IC)150 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X7
JESD-609 codee3/e4
Number of components2
Number of terminals7
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)800 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN/SILVER
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)470 ns
Nominal on time (ton)240 ns
VCEsat-Max3 V
SKM 150GB123D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
IGBT Modules
SKM 150GB123D
SKM 150GAL123D
Freewheeling Diode
Inverse Diode
Features
Module
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
GAL
1
11-09-2006 RAA
© by SEMIKRON

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