SKM 150GB123D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
IGBT Modules
SKM 150GB123D
SKM 150GAL123D
Freewheeling Diode
Inverse Diode
Features
Module
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
GAL
1
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITRANS
®
3
IGBT Modules
Freewheeling Diode
SKM 150GB123D
SKM 150GAL123D
Features
Module
Typical Applications
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Z
th
Symbol
Z
th(j-c)l
Conditions
Values
Units
SEMITRANS
®
3
Z
th(j-c)D
IGBT Modules
SKM 150GB123D
SKM 150GAL123D
Features
Typical Applications
GB
GAL
3
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
11-09-2006 RAA
© by SEMIKRON
SKM 150GB123D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 10 Transient thermal impedance of FWD
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
5
11-09-2006 RAA
© by SEMIKRON
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