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BUZ102SE3045

Description
52 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
CategoryDiscrete semiconductor    The transistor   
File Size125KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BUZ102SE3045 Overview

52 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

BUZ102SE3045 Parametric

Parameter NameAttribute value
Parts packaging codeD2PAK
package instructionPLASTIC, TO-263, 3 PIN
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)245 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (Abs) (ID)52 A
Maximum drain current (ID)52 A
Maximum drain-source on-resistance0.018 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)120 W
Maximum pulsed drain current (IDM)208 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1
BUZ 102S
SIPMOS Power Transistor
Features
N channel
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
I
D
55
52
V
A
Enhancement mode
R
DS(on)
0.018
Avalanche rated
dv/dt rated
175 ˚C operating temperature
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package
Ordering Code
Packaging
Tube
Tape and Reel
Tube
Pin 1
G
Pin 2
D
Pin 3
S
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Maximum Ratings,
at
Tj
= 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
Value
52
37
208
245
12
6
Unit
A
I
D
T
C
= 25 ˚C
T
C
= 100 ˚C
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 ˚C
Avalanche energy, single pulse
mJ
I
D
= 52 A,
V
DD
= 25 V,
R
GS
= 25
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
kV/
µ
s
I
S
= 52 A,
V
DS
= 40 V, di/dt = 200 A/
µ
s,
T
jmax
= 175 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
120
-55... +175
55/175/56
V
W
˚C
T
C
= 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Data Book
1
05.99

BUZ102SE3045 Related Products

BUZ102SE3045 BUZ102S BUZ102SE3045A
Description 52 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 52 A, 55 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 52 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Parts packaging code D2PAK TO-220AB D2PAK
package instruction PLASTIC, TO-263, 3 PIN FLANGE MOUNT, R-PSFM-T3 PLASTIC, TO-263, 3 PIN
Contacts 4 3 4
Reach Compliance Code compli _compli unknow
ECCN code EAR99 EAR99 EAR99
Other features AVALANCHE RATED AVALANCHE RATED AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 245 mJ 245 mJ 245 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (Abs) (ID) 52 A 52 A 52 A
Maximum drain current (ID) 52 A 52 A 52 A
Maximum drain-source on-resistance 0.018 Ω 0.018 Ω 0.018 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-220AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
Number of components 1 1 1
Number of terminals 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 120 W 120 W 120 W
Maximum pulsed drain current (IDM) 208 A 208 A 208 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO YES
Terminal form GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 - 1
Is it Rohs certified? - incompatible incompatible
JESD-609 code - e0 e0
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
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