BUZ 102S
SIPMOS Power Transistor
Features
•
N channel
•
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
V
DS
I
D
55
52
V
A
Enhancement mode
R
DS(on)
0.018
Ω
•
Avalanche rated
•
dv/dt rated
•
175 ˚C operating temperature
Type
BUZ102S
BUZ102S E3045A
BUZ102S E3045
Package
Ordering Code
Packaging
Tube
Tape and Reel
Tube
Pin 1
G
Pin 2
D
Pin 3
S
P-TO220-3-1 Q67040-S4011-A2
P-TO263-3-2 Q67040-S4011-A6
P-TO263-3-2 Q67040-S4011-A5
Maximum Ratings,
at
Tj
= 25 ˚C unless unless specified
Parameter
Symbol
Continuous drain current
Value
52
37
208
245
12
6
Unit
A
I
D
T
C
= 25 ˚C
T
C
= 100 ˚C
Pulsed drain current
I
Dpulse
E
AS
E
AR
dv/dt
T
C
= 25 ˚C
Avalanche energy, single pulse
mJ
I
D
= 52 A,
V
DD
= 25 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
kV/
µ
s
I
S
= 52 A,
V
DS
= 40 V, di/dt = 200 A/
µ
s,
T
jmax
= 175 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
120
-55... +175
55/175/56
V
W
˚C
T
C
= 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Data Book
1
05.99
BUZ 102S
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
Values
typ.
max.
1.25
62
-
-
62
40
K/W
Unit
R
thJC
R
thJA
R
thJA
-
-
-
-
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Parameter
Static Characteristics
Drain- source breakdown voltage
Symbol
min.
Values
typ.
-
3
max.
-
4
µA
-
-
-
0.1
-
10
1
100
100
nA
Ω
-
0.0155 0.018
V
Unit
V
(BR)DSS
V
GS(th)
I
DSS
55
2.1
V
GS
= 0 V,
I
D
= 0.25 mA,
T
j
= 25 ˚C
Gate threshold voltage,
V
GS
=
V
DS
I
D
= 90 µA
Zero gate voltage drain current
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 50 V,
V
GS
= 0 V,
T
j
= 150 ˚C
Gate-source leakage current
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 37 A
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Book
2
05.99
BUZ 102S
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Symbol
Values
Parameter
min.
Dynamic Characteristics
Transconductance
typ.
28
1220
410
210
12
max.
-
1525
515
265
18
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
10
-
-
-
-
S
pF
V
DS
≥2*
I
D
*R
DS(on)max
,
I
D
= 37 A
Input capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
ns
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 52 A,
R
G
= 6.8
Ω
Rise time
t
r
-
22
33
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 52 A,
R
G
= 6.8
Ω
Turn-off delay time
t
d(off)
-
30
45
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 52 A,
R
G
= 6.8
Ω
Fall time
t
f
-
25
40
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 52 A,
R
G
= 6.8
Ω
Data Book
3
05.99
BUZ 102S
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Parameter
Dynamic Characteristics
Gate to source charge
Symbol
min.
Values
typ.
8
23
45
5.9
max.
12
34.5
70
-
V
nC
Unit
Q
gs
Q
gd
Q
g
V
(plateau)
-
-
-
-
V
DD
= 40 V,
I
D
= 52 A
Gate to drain charge
V
DD
= 40 V,
I
D
= 52 A
Gate charge total
V
DD
= 40 V,
I
D
= 52 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
DD
= 40 V,
I
D
= 52 A
Reverse Diode
Inverse diode continuous forward current
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
-
-
-
-
-
1.2
70
0.15
52
208
1.7
105
0.25
A
T
C
= 25 ˚C
Inverse diode direct current,pulsed
T
C
= 25 ˚C
Inverse diode forward voltage
V
ns
µC
V
GS
= 0 V,
I
F
= 104 A
Reverse recovery time
V
R
= 30 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
V
R
= 30 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Data Book
4
05.99
BUZ 102S
Power Dissipation
Drain current
P
tot
=
f
(T
C
)
BUZ102S
I
D
=
f
(T
C
)
parameter:
V
GS
≥
10 V
BUZ102S
2.8
W
60
A
2.4
2.2
50
45
2.0
P
tot
1.8
40
I
D
100 120 140 160
˚C
190
1.6
1.4
1.2
1.0
0.8
35
30
25
20
15
0.6
0.4
0.2
0.0
0
20
40
60
80
10
5
0
0
20
40
60
80
100 120 140 160
˚C
190
T
C
T
C
Safe operating area
Transient thermal impedance
I
D
=
f
(V
DS
)
parameter :
D
= 0 ,
T
C
= 25 ˚C
10
3
BUZ102S
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
BUZ102S
K/W
A
tp
= 19.0µs
10
0
DS
100 µs
=
V
Z
thJC
10
2
10
-1
I
D
/I
D
DS
(o
n)
10
-2
D = 0.50
0.20
10
1
R
1 ms
10
-3
single pulse
10
-4
0.10
0.05
10 ms
0.02
0.01
DC
10
0 -1
10
0
1
2
10
10
V
10
10
-5 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
t
p
Data Book
5
05.99
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