2N917A datasheet, PDF - EEWORLD Datasheet

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2N917A: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72; CategoryDiscrete semiconductor The transistor; File Size624KB，3 Pages; ManufacturerCentral Semiconductor

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2N917A Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72

2N917A Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W4
Reach Compliance Code	_compli
Collector-based maximum capacity	1.7 pF
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-72
JESD-30 code	O-MBCY-W4
JESD-609 code	e0
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	600 MHz
Base Number Matches	1

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2N918

NPN SILICON RF TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N918 type

is an NPN silicon RF transistor, manufactured by

the epitaxial planar process and designed for high

frequency amplifier and oscillator applications.

MARKING: FULL PART NUMBER

TO-72 CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL

Collector-Base Voltage

VCBO

Collector-Emitter Voltage

VCEO

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Power Dissipation (TC=25°C)

Operating and Storage Junction Temperature

Thermal Resistance

VEBO

TJ, Tstg

3.0

200

300

-65 to +200

87.5

58.3

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

ICBO

VCB=15V

ICBO

VCB=15V, TA=150°C

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

Cib

Gpe

IC=1.0μA

IC=3.0mA

IE=10μA

IC=10mA,

IB=1.0mA

600

3.0

MAX

1.0

UNITS

μA

0.4

1.0

MHz

VCE=1.0V, IC=3.0mA

VCE=10V, IC=4.0mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

VCB=15V, IC=8.0mA, f=500MHz

VCB=12V, IC=6.0mA, f=200MHz

VCB=15V, IC=8.0mA, f=500MHz

VCE=6.0V, IC=1.0mA,

RG=400Ω, f=60kHz

1.7

3.0

2.0

6.0



R1 (11-September 2012)

2N917A Related Products

	2N917A	2N2865	2N3478	2N998	CEN832	CEN741
Description	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
package instruction	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	CYLINDRICAL, O-MBCY-W4	,	,
Reach Compliance Code	_compli	_compli	_compli	_compli	compli	compli
Polarity/channel type	NPN	NPN	NPN	NPN	PNP	NPN
surface mount	NO	NO	NO	NO	NO	NO
Base Number Matches	1	1	1	1	1	1
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	-	-
Configuration	SINGLE	SINGLE	SINGLE	DARLINGTON	-	-
Minimum DC current gain (hFE)	20	-	25	1600	150	150
JEDEC-95 code	TO-72	TO-72	TO-72	TO-72	-	-
JESD-30 code	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	O-MBCY-W4	-	-
JESD-609 code	e0	e0	e0	e0	-	-
Number of components	1	1	1	1	-	-
Number of terminals	4	4	4	4	-	-
Maximum operating temperature	200 °C	175 °C	200 °C	200 °C	-	-
Package body material	METAL	METAL	METAL	METAL	-	-
Package shape	ROUND	ROUND	ROUND	ROUND	-	-
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	-	-
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Maximum power dissipation(Abs)	0.2 W	0.2 W	0.2 W	1.8 W	-	-
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-
Terminal form	WIRE	WIRE	WIRE	WIRE	-	-
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	-
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	-	-
Nominal transition frequency (fT)	600 MHz	600 MHz	750 MHz	60 MHz	-	200 MHz

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