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70V3319S133BCG

Description
Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256
Categorystorage    storage   
File Size238KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Environmental Compliance
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70V3319S133BCG Overview

Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256

70V3319S133BCG Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionLBGA, BGA256,16X16,40
Contacts256
Reach Compliance Codecompliant
ECCN code3A991.B.2.A
Maximum access time4.2 ns
Other featuresFLOW-THROUGH OR PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeS-CBGA-B256
JESD-609 codee1
length17 mm
memory density4718592 bit
Memory IC TypeDUAL-PORT SRAM
memory width18
Humidity sensitivity level3
Number of functions1
Number of ports2
Number of terminals256
word count262144 words
character code256000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeLBGA
Encapsulate equivalent codeBGA256,16X16,40
Package shapeSQUARE
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply2.5/3.3,3.3 V
Certification statusNot Qualified
Maximum seat height1.7 mm
Maximum standby current0.03 A
Minimum standby current3.15 V
Maximum slew rate0.4 mA
Maximum supply voltage (Vsup)3.45 V
Minimum supply voltage (Vsup)3.15 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width17 mm
Base Number Matches1
LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018
HIGH-SPEED 3.3V
IDT70V3319/99S
256/128K x 18
SYNCHRONOUS
DUAL-PORT STATIC RAM
WITH 3.3V OR 2.5V INTERFACE
– Self-timed write allows fast cycle time
Separate byte controls for multiplexed bus and bus
matching compatibility
Dual Cycle Deselect (DCD) for Pipelined Output mode
LVTTL- compatible, single 3.3V (±150mV) power supply
for core
LVTTL compatible, selectable 3.3V (±150mV) or 2.5V
(±100mV) power supply for I/Os and control signals on
each port
Industrial temperature range (-40°C to +85°C) is
available at 133MHz.
Available in a 128-pin Thin Quad Flatpack, 208-pin fine
pitch Ball Grid Array, and 256-pin Ball
Grid Array
Supports JTAG features compliant to IEEE 1149.1
– Due to limited pin count, JTAG is not supported on the
128-pin TQFP package
Green parts available, see ordering information
Features:
True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed data access
– Commercial: 3.6ns (166MHz)/4.2ns (133MHz) (max.)
– Industrial: 4.2ns (133MHz) (max.)
Selectable Pipelined or Flow-Through output mode
– Due to limited pin count PL/
FT
option is not supported
on the 128-pin TQFP package. Device is pipelined
outputs only on each port.
Counter enable and repeat features
Dual chip enables allow for depth expansion without
additional logic
Full synchronous operation on both ports
– 6ns cycle time, 166MHz operation (6Gbps bandwidth)
– Fast 3.6ns clock to data out
– 1.7ns setup to clock and 0.5ns hold on all control, data, and
address inputs @ 166MHz
– Data input, address, byte enable and control registers
Functional Block Diagram
UB
L
LB
L
UB
R
LB
R
FT/PIPE
L
1/0
0a 1a
a
0b 1b
b
1b 0b
b
1a 0a
a
1/0
FT/PIPE
R
R/W
L
CE
0L
CE
1L
1
0
1/0
B
W
0
L
B
W
1
L
B B
WW
1 0
R R
1
0
1/0
R/W
R
CE
0R
CE
1R
OE
L
Dout0-8_L
Dout9-17_L
Dout0-8_R
Dout9-17_R
OE
R
1b 0b 1a 0a
0a 1a 0b 1b
0/1
,
FT/PIPE
R
FT/PIPE
L
0/1
ab
ba
256K x 18
MEMORY
ARRAY
I/O
0L
- I/O
17L
Din_L
Din_R
I/O
0R
- I/O
17R
CLK
L
A
17L(1)
A
0L
REPEAT
L
ADS
L
CNTEN
L
CLK
R
,
A
17R(1)
Counter/
Address
Reg.
ADDR_L
ADDR_R
Counter/
Address
Reg.
A
0R
REPEAT
R
ADS
R
CNTEN
R
5623 tbl 01
NOTE:
1. A
17
is a NC for IDT70V3399.
TDI
JTAG
TDO
TCK
TMS
TRST
JUNE 2018
DSC
5623/11
1
©2018 Integrated Device Technology, Inc.

70V3319S133BCG Related Products

70V3319S133BCG 70V3399S133PRFG 70V3399S133PRFGI 70V3399S133BCGI 70V3319S133BFGI 70V3319S133BFG 70V3319S133PRFG
Description Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128 Dual-Port SRAM, 128KX18, 4.2ns, CMOS, CBGA256, 17 X 17 MM X 1.4 MM, 1 MM PITCH, GREEN, BGA-256 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, CBGA208, 15 X 15 MM X 1.4 MM, 0.80 MM PITCH, GREEN, FPBGA-208 Dual-Port SRAM, 256KX18, 4.2ns, CMOS, PQFP128, 14 X 20 MM X 1.4 MM, GREEN, PLASTIC, TQFP-128
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to
Maker IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
Parts packaging code BGA QFP QFP BGA BGA BGA QFP
package instruction LBGA, BGA256,16X16,40 LFQFP, QFP128,.63X.87 LFQFP, QFP128,.63X.87 LBGA, BGA256,16X16,40 LFBGA, BGA208,17X17,32 LFBGA, BGA208,17X17,32 LFQFP, QFP128,.63X.87
Contacts 256 128 128 256 208 208 128
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN code 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A 3A991.B.2.A
Maximum access time 4.2 ns 4.2 ns 4.2 ns 4.2 ns 4.2 ns 4.2 ns 4.2 ns
Other features FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE FLOW-THROUGH OR PIPELINED ARCHITECTURE
Maximum clock frequency (fCLK) 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz 133 MHz
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code S-CBGA-B256 R-PQFP-G128 R-PQFP-G128 S-CBGA-B256 S-CBGA-B208 S-CBGA-B208 R-PQFP-G128
JESD-609 code e1 e3 e3 e1 e1 e1 e3
length 17 mm 20 mm 20 mm 17 mm 15 mm 15 mm 20 mm
memory density 4718592 bit 2359296 bit 2359296 bit 2359296 bit 4718592 bit 4718592 bit 4718592 bit
Memory IC Type DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM DUAL-PORT SRAM
memory width 18 18 18 18 18 18 18
Humidity sensitivity level 3 3 3 3 3 3 3
Number of functions 1 1 1 1 1 1 1
Number of ports 2 2 2 2 2 2 2
Number of terminals 256 128 128 256 208 208 128
word count 262144 words 131072 words 131072 words 131072 words 262144 words 262144 words 262144 words
character code 256000 128000 128000 128000 256000 256000 256000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 85 °C 85 °C 85 °C 70 °C 70 °C
organize 256KX18 128KX18 128KX18 128KX18 256KX18 256KX18 256KX18
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED PLASTIC/EPOXY
encapsulated code LBGA LFQFP LFQFP LBGA LFBGA LFBGA LFQFP
Encapsulate equivalent code BGA256,16X16,40 QFP128,.63X.87 QFP128,.63X.87 BGA256,16X16,40 BGA208,17X17,32 BGA208,17X17,32 QFP128,.63X.87
Package shape SQUARE RECTANGULAR RECTANGULAR SQUARE SQUARE SQUARE RECTANGULAR
Package form GRID ARRAY, LOW PROFILE FLATPACK, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH FLATPACK, LOW PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260 260
power supply 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 1.7 mm 1.6 mm 1.6 mm 1.7 mm 1.7 mm 1.7 mm 1.6 mm
Maximum standby current 0.03 A 0.03 A 0.04 A 0.04 A 0.04 A 0.03 A 0.03 A
Minimum standby current 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
Maximum slew rate 0.4 mA 0.4 mA 0.48 mA 0.48 mA 0.48 mA 0.4 mA 0.4 mA
Maximum supply voltage (Vsup) 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V 3.45 V
Minimum supply voltage (Vsup) 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V 3.15 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount YES YES YES YES YES YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL COMMERCIAL COMMERCIAL
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Matte Tin (Sn) - annealed
Terminal form BALL GULL WING GULL WING BALL BALL BALL GULL WING
Terminal pitch 1 mm 0.5 mm 0.5 mm 1 mm 0.8 mm 0.8 mm 0.5 mm
Terminal location BOTTOM QUAD QUAD BOTTOM BOTTOM BOTTOM QUAD
Maximum time at peak reflow temperature 30 30 30 30 30 30 30
width 17 mm 14 mm 14 mm 17 mm 15 mm 15 mm 14 mm
Base Number Matches 1 1 1 1 1 1 1

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