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MA4E2513L-1289

Description
MIXER DIODE,CHIP / DIE
CategoryDiscrete semiconductor    diode   
File Size97KB,3 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Environmental Compliance
Download Datasheet Parametric Compare View All

MA4E2513L-1289 Overview

MIXER DIODE,CHIP / DIE

MA4E2513L-1289 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Contacts2
Manufacturer packaging codeCASE 1289
Reach Compliance Codeunknow
ECCN codeEAR99
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum operating frequency18 GHz
Maximum operating temperature150 °C
surface mountYES
Base Number Matches1
MA4E2513L-1289
SURMOUNT
TM
Low Barrier Tee “0301” Footprint Silicon
Schottky Diodes
Features
Extremely Low Parasitic Capitance and Inductance
Extremely Small “0301” (1000 x 300 um) Footprint
Surface Mountable in Microwave Circuits, No Wire-
bonds Required
Rugged HMIC Construction with Polyimide Scratch
Protection
Reliable, Multilayer Metalization with a Diffusion Bar-
rier, 100 % Stabilization Bake (300°C, 16 hours)
Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V2
Case Style 1289
(Top, Side, & Bottom Views)
A
B
Description and Applications
The MA4E2513L-1289 SURMOUNT
TM
Diodes are Sili-
con Low Barrier Schottky Devices fabricated with the
patented Heterolithic Microwave Integrated Circuit
(HMIC) process. HMIC circuits consist of Silicon pedes-
tals which form diodes or via conductors embedded in
glass dielectric, which acts as the low dispersion, micro-
strip transmission medium. The combination of silicon
and glass allows HMIC devices to have excellent loss
and power dissipation characteristics in a low profile,
reliable device.
The Surmount Schottky devices are excellent choices for
circuits requiring the small parasitics of a beam lead de-
vice coupled with the superior mechanical performance
of a chip. The Surmount structure employs very low re-
sistance silicon vias to connect the Schottky contacts to
the metalized mounting pads on the bottom surface of
the chip. These devices are reliable, repeatable, and a
lower cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge
than conventional beam lead Schottky diodes.
The multi-layer metalization employed in the fabrication
of the Surmount Schottky junctions includes a platinum
diffusion barrier, which permits all devices to be sub-
jected to a 16-hour non-operating stabilization bake at
300°C.
The extremely small “0301” outline allows for Surface
Mount placement and multi-functional polarity orienta-
tions.
The MA4E2513L-1289 SURMOUNT
TM
Diode is recom-
mended for use in microwave circuits through Ku band
frequencies for lower power applications such as mixers,
sub-harmonic mixers, detectors, and limiters. The HMIC
construction facilitates the direct replacement of more
fragile beam lead diodes with the corresponding sur-
mount diode, which can be connected to a hard or soft
substrate circuit with solder.
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM is considering for
North America
Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM has under develop-
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
Visit www.macom.com for additional data sheets and product information.
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
volume is not guaranteed.
MA-COM Technical Solutions and its affiliates reserve the right to make changes to
C
D
E
D
E
D
B
Cathode 1
Common
Anode 2
DIM
A
B
C
D
E
INCHES
MIN.
0.038
0.011
0.004
0.007
0.007
MILLIMETERS
MIN.
0.975
0.275
0.102
0.175
0.175
MAX.
0.040
0.013
0.008
0.009
0.009
MAX.
1.025
0.325
0.203
0.225
0.225

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MA4E2513L-1289
Description MIXER DIODE,CHIP / DIE
Is it Rohs certified? conform to
Contacts 2
Manufacturer packaging code CASE 1289
Reach Compliance Code unknow
ECCN code EAR99
Diode component materials SILICON
Diode type MIXER DIODE
Maximum operating frequency 18 GHz
Maximum operating temperature 150 °C
surface mount YES
Base Number Matches 1
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