2N5664
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N5664J)
•
JANTX level (2N5664JX)
•
JANTXV level (2N5664JV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose high power switching
•
Power Transistor
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-66 metal can
Also available in chip configuration
Chip geometry 9221
Reference document:
MIL-PRF-19500/455
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 100°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
•
Qualification Levels: JAN, JANTX, and
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
200
250
6
5
2.5
14.3
30
300
3.3
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
R
θJA
T
J
T
STG
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5664
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
BEsat1
V
BEsat2
V
CEsat1
V
CEsat2
Symbol
|h
FE
|
C
OBO
Test Conditions
I
C
= 0.5 A, V
CE
= 2 Volts
I
C
= 1 A, V
CE
= 5 Volts
I
C
= 3 A, V
CE
= 5 Volts
I
C
= 5 A, V
CE
= 5 Volts
I
C
= 1 A, V
CE
= 5 Volts
T
A
= -55°C
I
C
= 3 A, I
B
= 300 mA
I
C
= 5 A, I
B
= 1 A
I
C
= 3 A, I
B
= 300 mA
I
C
= 5 A, I
B
= 1 A
Test Conditions
V
CE
= 5 Volts, I
C
= 500 mA,
f = 10 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
Symbol
V
(BR)CER
V
(BR)EBO
I
CBO1
I
CES1
I
CES1
Test Conditions
I
C
= 10
µA,
R
BE
= 100
Ω
I
E
= 10
µA
V
CB
= 200 Volts
V
CE
= 200 Volts
V
CE
= 200 Volts, T
A
= 150°C
Min
250
6
100
200
100
Typ
Max
Units
Volts
Volts
nA
nA
µA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
40
40
15
5
15
Typ
Max
120
Units
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Switching Characteristics
Parameter
Turn-On Time
Turn-Off Time
1.2
1.5
0.4
1.0
Volts
Volts
Min
2
Typ
Max
7
120
Units
pF
Symbol
t
ON
t
OFF
Test Conditions
I
C
= 1 A, V
CC
= 100 Volts
I
C
= 1 A, V
CC
= 100 Volts
Min
Typ
Max
0.25
1.5
Units
µs
µs
Copyright 2002
Rev. D
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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