2N720A
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N720AJ)
•
JANTX level (2N720AJX)
•
JANTXV level (2N720AJV)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-18 metal can
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/182
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 37.5
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Operating Junction Temperature
Storage Temperature
Thermal Resistance
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
T
STG
•
Qualification Levels: JAN, JANTX,
JANTXV
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Rating
80
120
7
500
0.5
3.08
1.8
10.3
-65 to +200
325
Unit
Volts
Volts
Volts
mA
W
mW/°C
W
mW/°C
°C
°C/W
R
θJA
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N720A
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
V
BEsat
V
CEsat
Symbol
V
(BR)CEO
V
(BR)CER
I
CBO1
I
CBO2
I
CBO3
I
EBO1
I
EBO2
Test Conditions
I
C
= 30 mA
I
C
= 10 mA, R
BE
= 10
Ω
V
CB
= 120 Volts
V
CB
= 90 Volts
V
CE
= 90 Volts, T
A
= 150
O
C
V
EB
= 7 Volts
V
EB
= 5 Volts
Min
80
100
100
10
15
100
10
Typ
Max
Units
Volts
Volts
µA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Short Circuit Forward Current Transfer
Ratio
Short Circuit Input Impedance
Open Circuit Output Admittance
Open Circuit reverse Voltage Transfer
Ratio
Open Circuit Output Capacitance
Switching Characteristics
Pulse Response
Test Conditions
I
C
= 1 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts
I
C
= 150 mA, V
CE
= 10 Volts
I
C
= 10 mA, V
CE
= 10 Volts,
T
A
= -55
O
C
I
C
= 150 mA, I
B
= 15 mA
I
C
= 150 mA, I
B
= 15 mA
Min
20
35
40
20
Typ
Max
Units
120
1.3
5.0
Volts
Volts
Symbol
|h
FE
|
h
FE1
h
FE2
h
ie
h
oe
h
re
C
OBO
Test Conditions
V
CE
= 10 Volts, I
C
= 50 mA,
f = 20 MHz
f = 1 kHz
V
CE
= 5 Volts, I
C
= 1 mA
V
CE
= 10 Volts, I
C
= 5 mA
V
CB
= 10V, I
C
= 5mA
V
CB
= 10V, I
C
= 5mA
V
CB
= 10V, I
C
= 5mA
V
CB
= 10 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
3
35
45
4
Typ
Max
10
100
150
8
0.5
1.5x10
-4
Units
Ω
µΩ
2
15
pF
t
on
+ t
off
30
ns
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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