2N3737
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3737J)
•
JANTX level (2N3737JX)
•
JANTXV level (2N3737JV)
•
JANS level (2N3737JS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed TO-46 metal can
Also available in chip configuration
Chip geometry 0806
Reference document:
MIL-PRF-19500/395
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Power Dissipation, T
C
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
R
θJA
T
J
T
STG
Rating
40
75
5
1.5
0.5
2.86
1.9
11.3
350
-65 to +200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N3737
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
V
BEsat1
V
BEsat2
V
BEsat3
V
BEsat4
V
CEsat1
V
CEsat2
V
CEsat3
V
CEsat4
Test Conditions
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 150 mA, V
CE
= 1 Volts
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1 A, V
CE
= 1.5 Volts
I
C
= 1.5 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55°C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
Symbol
V
(BR)CEO
I
CBO1
I
CBO2
I
CEX1
I
CEX2
I
EBO1
I
EBO2
Test Conditions
I
C
= 10 mA
V
CB
= 75 Volts
V
CB
= 30 Volts
V
CE
= 30 Volts, V
EB
= 2 Volts
V
CE
= 30 Volts, V
EB
= 2 Volts,
T
A
= 150°C
V
EB
= 5 Volts
V
EB
= 4 Volts
Min
40
10
250
200
250
10
100
Typ
Max
Units
Volts
µA
nA
nA
µA
µA
nA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
DC Current Gain
Min
35
40
40
20
20
15
Typ
Max
Units
140
80
Base-Emitter Saturation Voltage
0.9
Collector-Emitter Saturation Voltage
0.8
1.0
1.2
1.4
0.2
0.3
0.5
0.9
Volts
Volts
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Switching Characteristics
Delay Time
Rise Time
Saturated Turn-Off Time
t
d
t
r
t
OFF
V
BE
= 2 Volts, I
C
= 1 A,
I
B
= 100 mA
I
C
= 1 A, I
B1
=I
B2
=100 mA
8
40
60
ns
ns
Symbol
|h
FE
|
C
OBO
C
IBO
Test Conditions
V
CE
= 10 Volts, I
C
= 50 mA,
f = 100 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
2.5
Typ
Max
6.0
9
80
pF
pF
Units
Copyright 2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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