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HYB18TC256800BF-2.5

Description
256-Mbit Double-Data-Rate-Two SDRAM
Categorystorage    storage   
File Size2MB,62 Pages
ManufacturerQIMONDA
Environmental Compliance
Download Datasheet Parametric View All

HYB18TC256800BF-2.5 Overview

256-Mbit Double-Data-Rate-Two SDRAM

HYB18TC256800BF-2.5 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerQIMONDA
Parts packaging codeBGA
package instructionTFBGA, BGA60,9X11,32
Contacts60
Reach Compliance Codeunknow
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time0.4 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
interleaved burst length4,8
JESD-30 codeR-PBGA-B60
length10.5 mm
memory density268435456 bi
Memory IC TypeDDR DRAM
memory width8
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals60
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature
organize32MX8
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X11,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.2 mm
self refreshYES
Continuous burst length4,8
Maximum standby current0.007 A
Maximum slew rate0.255 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10 mm
May 2007
H Y B1 8T C 2568 00 BF
H Y B1 8T C 2561 60 BF
256-Mbit Double-Data-Rate-Two SDRAM
DDR2 SDRAM
RoHS Compliant Products
Internet Data Sheet
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